MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
STH80N10F7-2-VB


100V 100A 10m@10V 1PCSNChannel TO-263 MOSFETs ROHS
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VBsemi Elec 59
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AUD 1.6734
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SIR632DP-T1-RE3


MOSFET 150V Vds 20V Vgs PowerPAK SO-8
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Vishay 59
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AUD 1.7326
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29 A150 V28.5 mOhmsN - Channel 2 V- 55 C+ 150 C69.5 WSmd/SmtPOWERPAK - SO - 8Cut TapeSi1 Channel20 V21 nCEnhancement Trenchfet, Powerpak
IPP80N03S4L03AKSA1


MOSFET N-Ch 30V 80A TO220-3 OptiMOS-T2
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Infineon 59
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AUD 2.1507
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80 A30 V2.3 mOhmsN - Channel 1 V- 55 C+ 175 C136 WThrough HoleTO - 220 - 3TubeSi1 Channel16 V140 nCEnhancementAec - Q101 
TPS1100D


MOSFET MOSFET 10ns RT
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Texas Instruments 59
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AUD 2.4239
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1.6 A15 V180 mOhmsP - Channel  - 40 C+ 125 C791 mWSmd/SmtSOIC - 8TubeSi1 Channel15 V Enhancement  
CSD19531KCS


N-Channel 100 V 100A (Ta) 214W (Tc) Through Hole TO-220-3
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Texas Instruments 59
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AUD 2.4866
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200 A100 V7.7 mOhmsN - Channel 2.7 V- 55 C+ 175 C179 WThrough HoleTO - 220 - 3TubeSi1 Channel20 V38 nCEnhancement Nexfet
IPB60R180P7


MOSFETs HIGH POWER_NEW
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Infineon 59
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AUD 2.5976
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CSD18510KCS


MOSFET 40-V, N channel NexFET power MOSFET, single TO-220, 1.7 mOhm 3-TO-220 -55 to 175
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Texas Instruments 59
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AUD 3.6267
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100 A40 V2 mOhmsN - Channel 1.4 V- 55 C+ 175 C250 WThrough HoleTO - 220 - 3TubeSi1 Channel20 V153 nCEnhancement Nexfet
IPDQ65R080CFD7AXTMA1


MOSFETs Y
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Infineon 59
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AUD 5.2045
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36 A650 V150 mOhms  4 V- 40 C+ 150 C223 WSMD/SMTHDSOP - 22Reel , Cut TapeSi1 Channel- 20 V , + 20 V50 nCEnhancement  
APT5010LVRG


MOSFET FG, MOSFET, 500V, TO-264, RoHS
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Microchip 59
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AUD 27.2575
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            POWER MOS 5®      
SK2301AVP


SC-59 MOSFETs ROHS
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Shikues 58
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AUD 0.0201
Multiples of: 20

                   
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