MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
MS4N1350W


1.5kV 4A 140W 5.8@10V,1.3A 6V@250A 1 N-Channel TO-247 MOSFETs ROHS
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MASPOWER 74
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AUD 1.9716
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NVD3055-150T4G-VF01


MOSFET NFET DPAK 60V 9A 1 50MOHM
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ON Semiconductor 74
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AUD 2.0508
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9 A60 V150 mOhmsN - Channel 2 V- 55 C+ 175 C28.8 WSmd/SmtDPAK - 3Cut TapeSi1 Channel20 V15 nCEnhancement  
APG080N12


120V 106A 6.5m@20V,106A 1PCSNChannel TO-220 MOSFETs ROHS
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Quan Li 74
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AUD 2.1177
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DMTH61M8LPS-13


N-Channel 60V 225A (Tc) 3.2W (Ta), 187.5W (Tc) Surface Mount PowerDI5060-8
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Diodes Incorporated 74
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AUD 2.1672
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          8 - PowertdfnTape And ReelMosfet (Metal Oxide)      
SPP11N80C3


MOSFET N-Ch 800V 11A TO220-3 CoolMOS C3
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Infineon 74
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AUD 2.5284
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11 A800 V450 mOhmsN - Channel 2.1 V- 55 C+ 150 C156 WThrough HolePG - TO - 220 - 3TubeSi1 Channel10 V64 nCEnhancement Coolmos
IPP60R180P7XKSA1


HIGH POWER_NEW
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Infineon 74
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AUD 2.6328
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18 A600 V145 mOhmsN - Channel 3 V- 55 C+ 150 C72 WThrough HoleTO - 220 - 3TubeSi1 Channel20 V25 nCEnhancement Coolmos
WMK28N60C4


Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 13A; Idm: 65A; 160W
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Wayon 74
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AUD 3.0507
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            WMOS C4      
IPS70R360P7S


MOSFET CONSUMER
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Infineon 74
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AUD 7.0385
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IXFX100N65X2


MOSFET MOSFET 650V/100A Ultra Junction X2
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IXYS 74
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AUD 22.3612
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100 A650 V30 mOhmsn - channel 2.7 V- 55 C+ 150 C1.04 kWthrough holeTO - 247 - 3Tubesi1 channel30 V180 nCenhancement hiperfet
IXTH60N20L2


MOSFET LINEAR L2 SERIES MOSFET 200V 60A
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IXYS 74
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AUD 23.3134
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60 A200 V45 mOhmsn - channel 4.5 V- 55 C+ 150 C540 Wthrough holeTO - 247 - 3Tubesi1 channel20 V255 nCenhancement linear l2
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