MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
AP0603GH-HF-VB


30V 100A 1PCSNChannel TO-252 MOSFETs ROHS
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VBsemi Elec 74
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AUD 0.5585
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DMN6068LK3Q-13


MOSFETs MOSFET BVDSS: 41V-60V
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Diodes Incorporated 74
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AUD 0.5911
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IXTA32P05T-TRL-JSM


TO-263-2L MOSFETs ROHS
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JSMSEMI 74
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AUD 0.7052
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NVD3055L170T4G-VF01


MOSFET NFET DPAK 60V 9A 1 70MOHM
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ON Semiconductor 74
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AUD 0.7234
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9 A60 V170 mOhmsN - Channel 1 V- 55 C+ 175 C28.5 WSmd/SmtDPAK - 3Cut TapeSi1 Channel15 V10 nCEnhancement  
FQP4N20


200V 5A 0.85O@10V,5A N Channel TO-220AB-3 MOSFETs ROHS
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VBsemi Elec 74
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AUD 0.7693
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STI6N62K3


N-Channel 620 V 5.5A (Tc) 90W (Tc) Through Hole I2PAK
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STMicroelectronics 74
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AUD 0.8357
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         Through HoleTO - 262 - 3 Si     Supermesh
TSM60N900CP


MOSFET Power MOSFET, N-CHAN 600V, 4.5A, 900mOhm
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Taiwan Semiconductor 74
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AUD 1.0596
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4.5 A600 V900 mOhmsN - Channel 2.6 V- 55 C+ 150 C50 WSmd/SmtTO - 252 - 3ReelSi1 Channel+/- 30 V8.98 nCEnhancement  
RS25N50F


TO-220F MOSFETs ROHS
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REASUNOS 74
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AUD 1.1197
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TSA23N50M


MOSFET N Trench 500V 23A (Tc) 4V @ 250uA 260 mΩ @ 11.5A,10V TO-3P RoHS
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Truesemi 74
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AUD 1.2956
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IPD031N03LG-VB


30V 2m@10V 3V 1PCSNChannel TO-252 MOSFETs ROHS
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VBsemi Elec 74
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AUD 1.5398
Multiples of: 1

                   
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