MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Image  Information Image Stock Code(▲▼)Description
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IRF3007PBF


Transistor: N-MOSFET; unipolar; 75V; 80A; 200W; TO220AB
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Infineon 73
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AUD 1.3496
Multiples of: 1

            Hexfet®      
IRFI4212H-117P


Transistor: N-MOSFET x2; unipolar; 100V; 11A; 18W; TO220FP-5
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Infineon 73
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AUD 1.4602
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11 A100 V58 mOhmsN - Channel  - 55 C 18 WThrough HoleTO - 220 - 3 FPTubeSi2 Channel20 V12 nCEnhancement  
IPTG017N12NM6ATMA1


MOSFETs N
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Infineon 73
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AUD 4.5642
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331 A120 V1.7 mOhmsN - Channel 3.1 V- 55 C+ 175 C395 WSMD/SMTHSOG - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V113 nCEnhancement  
IXFA16N60P3


MOSFET 600V 16A
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IXYS 73
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AUD 4.8478
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         Smd/SmtTO - 263 - 3TubeSi     Hiperfet
IPDQ65R080CFD7XTMA1


MOSFETs Y
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Infineon 73
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AUD 4.991
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36 A650 V80 mOhmsN - Channel 4.5 V- 55 C+ 150 C223 WSMD/SMTHDSOP - 22Reel , Cut TapeSi1 Channel- 20 V , + 20 V50 nCEnhancement  
IPZA60R060P7XKSA1


Transistor: N-MOSFET; unipolar; 600V; 30A; 164W; PG-TO247-4
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Infineon 73
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AUD 6.1567
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            Coolmos P7      
IPB107N20NAATMA1


Transistor: N-MOSFET; unipolar; 200V; 88A; 300W; PG-TO263-3
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Infineon 73
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AUD 8.8105
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            Optimos 3      
PSMNR90-80CSFJ


MOSFETs SOT8005 N CHAN 80V
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Nexperia 73
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AUD 8.8786
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505 A80 V900 uOhmsN - Channel 4 V- 55 C+ 175 C1.55 kWSMD/SMTSOT8000A - 12Reel , Cut TapeSi1 Channel- 20 V , + 20 V309 nCEnhancement  
IXFH36N60P


MOSFET 600V 36A
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IXYS 73
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AUD 13.6761
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36 A600 V190 mOhmsn - channel  - 55 C+ 150 C650 Wthrough holeTO - 247 - 3Tubesi1 channel30 V enhancement hiperfet
IXFH40N85X


MOSFET 850V Ultra Junction X-Class Pwr MOSFET
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IXYS 73
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AUD 16.0819
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40 A850 V145 mOhmsN - Channel 3.5 V- 55 C+ 150 C860 WThrough HoleTO - 247 - 3TubeSi1 Channel30 V98 nCEnhancement Hiperfet
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