MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IPW80R280P7XKSA1


Transistor: N-MOSFET; unipolar; 800V; 10.6A; 101W; PG-TO247-3
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Infineon 109
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AUD 2.6269
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            Coolmos P7      
TK080A60Z1,S4X


MOSFETs N-ch MOSFET, 600 V, 0.08 ohma.10V, TO-220SIS, DTMOS?
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Toshiba 109
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AUD 4.6299
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30 A600 V80 mOhmsN - Channel 4 V + 150 C45 WThrough HoleTO - 220SIS - 3TubeSi1 Channel30 V43 nCEnhancement  
IXTH6N120


MOSFET 6 Amps 1200V 2.700 Rds
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IXYS 109
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AUD 16.4343
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6 A1.2 kV2.4 OhmsN - Channel  - 55 C+ 150 C300 WThrough HoleTO - 247 - 3TubeSi1 Channel20 V Enhancement  
FCH029N65S3-F155


N-Channel 650V 75A (Tc) 463W (Tc) Through Hole TO-247-3
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ON Semiconductor 109
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AUD 24.6761
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          TO - 247 - 3 VARIANTTubeMosfet (Metal Oxide)      
BUK9M53-60EX


MOSFET BUK9M53-60E/MLFPAK/REEL 7" Q1/
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Nexperia 108
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AUD 0.2873
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17 A60 V43 mOhmsN - Channel 1.4 V- 55 C+ 175 C36 WSmd/SmtLFPAK33 - 5Cut TapeSi1 Channel10 V6 nCEnhancement  
12N70L-TF1-T


TO-220F1 MOSFETs ROHS
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Unisonic 108
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AUD 0.5035
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IPW60R125P6XKSA1


Transistor: N-MOSFET; unipolar; 600V; 30A; 219W; PG-TO247-3
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Infineon 105
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AUD 3.3821
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            Coolmos P6      
HSP0026


100V 50A 62.5W 16mΩ@10V,9A 2.5V@250uA null TO-220 MOSFETs ROHS
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HUASHUO 99
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AUD 0.46
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IRLIZ34GPBF


Vishay Semiconductors MOSFET N-Chan 60V 20 Amp
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Vishay 70
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AUD 1.8881
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20 A60 V50 mOhmsN - Channel10 V - 55 C+ 175 C42 WThrough HoleTO - 220 - 3TubeSi   Enhancement  
IRL640SPBF


MOSFET N-Chan 200V 17 Amp
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Vishay 1
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AUD 1.9696
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   N - Channel  - 55 C+ 150 C Smd/SmtD2PAKTubeSi      
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