MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
NVMFS4C302NT1G


MOSFET NFET SO8FL 30V 1.15MO
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ON Semiconductor 2552
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AUD 2.0194
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VBE1303


MOSFET N Trench 30V 100A 2.5V @ 250uA 3 mΩ @ 37A,4.5V TO-252 RoHS
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VBsemi Elec 113
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AUD 0.5815
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FDB3502-VB


100V 1PCSNChannel TO-263 MOSFETs ROHS
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VBsemi Elec 111
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AUD 0.6039
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RU40120S


MOSFET N Trench 40V 120A (Tc) 4V @ 250uA 4.5 mΩ @ 60A,10V TO-263-2 RoHS
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Ruichips 111
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AUD 0.6158
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NTD6416ANT4G-VB


100V 25A 1PCSNChannel TO-252 MOSFETs ROHS
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VBsemi Elec 111
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AUD 0.6365
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IPP040N06N


Infineon Technologies MOSFET N-Ch 60V 80A TO220-3
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Infineon 111
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AUD 1.2724
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80 A60 V4 mOhmsN - Channel20 V2.1 V- 55 C+ 175 C107 WThrough HoleTO - 220 - 3TubeSi1 Channel20 V38 nCEnhancement Optimos
TK56E12N1,S1X(S


Transistor: N-MOSFET; unipolar; 120V; 56A; 168W; TO220AB
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Toshiba 111
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AUD 2.8209
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IXTQ60N20T-JSM


TO-247 MOSFETs ROHS
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JSMSEMI 109
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AUD 1.9333
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SUM40N10-30-GE3-VB


100V 75A 20m@10V,75A 1PCSNChannel TO-263 MOSFETs ROHS
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VBsemi Elec 107
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AUD 1.0885
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IRL620STRLPBF-VB


200V 1PCSNChannel TO-263 MOSFETs ROHS
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VBsemi Elec 104
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AUD 0.7018
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