MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
VB8658


MOSFET P Channel 60V 6.5A TSOP-6 RoHS
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VBsemi Elec 113
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AUD 0.3953
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VBZQF50N03


MOSFET QFN-8(3x3) RoHS
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VBsemi Elec 113
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AUD 0.4951
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SUB75N06-08-VB


60V 150A 4mΩ@10V 1PCSNChannel TO-263 MOSFETs ROHS
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VBsemi Elec 113
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AUD 1.0008
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TSP50N20M


TO-220 MOSFETs ROHS
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Truesemi 113
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AUD 0.9988
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FDB15N50-VB


650V 18A 1PCSNChannel TO-263 MOSFETs ROHS
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VBsemi Elec 113
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AUD 1.5827
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NVTFS003N04CTAG


Transistor MOSFET N-CH 40V 103A 8-Pin WDFN Surface Mount T/R
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ON Semiconductor 113
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AUD 1.8189
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103 A40 V3.5 mOhmsN - Channel 2.5 V- 55 C+ 175 C69 WSMD/SMTWDFN - 8Reel , Cut TapeSi1 Channel- 20 V , 20 V23 nCEnhancementAEC - Q101 
IQE013N04LM6CGSCATMA1


MOSFET
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Infineon 113
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AUD 1.8716
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31 A40 V1.35 mOhmsN - Channel 2 V- 55 C+ 175 C2.5 WSMD/SMTWHTFN - 9Reel , Cut TapeSi1 Channel- 20 V , + 20 V41 nCEnhancement  
IXTQ26N50P


N-Channel 500 V 26A (Tc) 400W (Tc) Through Hole TO-3P
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IXYS 113
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AUD 7.4373
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26 A500 V230 mOhmsn - channel  - 55 C+ 150 C400 Wthrough holeTO - 3P - 3Tubesi1 channel30 V enhancement  
APT7F120B


N-Channel 1200 V 7A (Tc) 335W (Tc) Through Hole TO-247 [B]
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Microchip 113
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AUD 9.5522
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7 A1200 V1.57 OhmsN - Channel 4 V- 55 C+ 150 C335 WThrough HoleTO - 247 - 3ReelSi 30 V80 nCEnhancement Power Mos 8
SI2369BDS-T1-GE3


MOSFET 30-V D-S MOSFET P-CHANNEL
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Vishay 68
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AUD 1.0754
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7.5 A30 V27 mOhmsP - Channel 2.2 V- 55 C+ 150 C2.5 WSMD/SMTSOT - 23 - 3Reel , Cut TapeSi1 Channel- 20 V , 16 V12.9 nCEnhancement TrenchFET
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