MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
STB75NF20


MOSFET Low charge STripFET
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

STMicroelectronics 111
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AUD 4.909
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75 A200 V34 mOhmsN - Channel 2 V- 50 C+ 150 C190 WSMD/SMTD2PAK - 3 (TO - 263 - 3)Reel , Cut TapeSi1 Channel- 20 V , 20 V84 nCEnhancement STripFET
IXFH16N80P


MOSFET 16 Amps 800V 0.6 Rds
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IXYS 111
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AUD 9.4896
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16 A800 V600 mOhmsn - channel 5 V- 55 C+ 150 C460 Wthrough holeTO - 247 - 3Tubesi1 channel30 V71 nCenhancement polarhv, hiperfet
IXTK120P20T


MOSFET TrenchP Power MOSFET
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IXYS 111
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AUD 39.5343
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120 A200 V30 mOhmsp - channel 4.5 V- 55 C+ 150 C1.04 kWthrough holeTO - 264 - 3Tubesi 15 V740 nCenhancement trenchp
TPC8119-VB


30V 11A 10m@10V 1PCSPChannel SOP-8 MOSFETs ROHS
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VBsemi Elec 110
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AUD 0.4598
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FR5505


60V 25A 53mO@10V,25A P Channel TO-252 MOSFETs ROHS
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VBsemi Elec 110
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AUD 0.6021
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SIS412DN-T1-GE3-VB


30V 18A 21m@10V 1PCSNChannel DFN-8(3x3) MOSFETs ROHS
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VBsemi Elec 110
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AUD 0.8267
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CSD16406Q3


MOSFET QFN8(3X3) RoHS
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VBsemi Elec 110
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AUD 0.9921
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DMT8008LFG-7


MOSFET MOSFET BVDSS: 61V-100V
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Diodes Incorporated 110
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AUD 1.0097
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48 A80 V6.9 mOhmsN - Channel 2.5 V- 55 C+ 150 C1 WSMD/SMTPowerdi3333 - 8Reel , Cut TapeSi1 Channel- 20 V , 20 V37.7 nCEnhancement  
J304-VB


60V 1PCSPChannel TO-220F MOSFETs ROHS
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VBsemi Elec 110
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AUD 1.0141
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IRFR1N60ATRPBF


N-Channel 600 V 1.4A (Tc) 36W (Tc) Surface Mount D-Pak
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Vishay 110
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AUD 1.0294
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   N - Channel  - 55 C+ 150 C Smd/SmtDPAKReelSi      
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