MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IXTQ96N20P


Trans MOSFET N-CH 200V 96A 3-Pin(3+Tab) TO-3P
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IXYS 285
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AUD 6.5143
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96 A200 V24 mOhmsN - Channel  - 55 C+ 175 C600 WThrough HoleTO - 3P - 3TubeSi1 Channel20 V Enhancement  
IMW120R060M1H


MOSFET SIC DISCRETE
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Infineon 130
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AUD 14.8031
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TK17A65W,S5X


MOSFET TO-220SIS PD=45W 1MHz PWR MOSFET TRNS
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Toshiba 126
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AUD 2.6731
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17.3 A650 V200 mOhmsN - Channel 3.5 V- 55 C+ 150 C45 WThrough HoleTO - 220SIS - 3TubeSi1 Channel30 V45 nCEnhancement Dtmosiv
STW38N65M5


Transistor: N-MOSFET; unipolar; 650V; 19A; 190W; TO247
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STMicroelectronics 126
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AUD 6.3896
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            Mdmesh      
IRF9362TRPBF


Transistor: P-MOSFET; unipolar; -30V; -8A; 2W; SO8
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Infineon 125
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AUD 0.6377
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8 A30 V17 mOhmsP - Channel    2 WSmd/SmtSOIC - 8ReelSi2 Channel20 V13 nC   
IRF40H233XTMA1


MOSFET TRENCH <= 40V
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Infineon 125
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AUD 0.967
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           Cut TapeSi      
TK6A60W,S4VX


Toshiba MOSFET N-Ch 6.2A 30W FET 600V 390pF 12nC
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Toshiba 125
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AUD 1.2182
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6.2 A600 V680 mOhmsN - Channel 2.7 v to 3.7 V- 55 C+ 150 C30 WThrough HoleTO - 220 - 3ReelSi1 Channel30 V12 nCEnhancement  
AGMH022N10C


100V 220A 300W 2.2m@10V,50A 3.5V@250uA 1PCSNChannel TO-220 MOSFETs ROHS
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AGM-Semi 125
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AUD 1.3558
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AOTF12N60


MOSFET N Trench 600V 12A (Tc) 4.5V @ 250uA 550 mΩ @ 6A,10V TO-220F (TO-220IS) RoHS
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Alpha & Omega 121
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AUD 2.3821
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12 A  N    50 WThrough Hole Tape And Reel    Enhancement  
NCE0130A


TO-220F-3 MOSFETs ROHS
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NCE Power 105
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AUD 0.5094
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