MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
BSC152N15LS5ATMA1


MOSFETs N
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Infineon 5714
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AUD 1.6746
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55 A150 V15.2 mOhmsN - Channel 1.8 V- 55 C+ 150 C96 WSMD/SMTSUPERSO - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V23 nCEnhancement  
SQJ454EP-T1_BE3


MOSFETs N-CHANNEL 200-V (D-S) 175C MOSFET
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Vishay 2987
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AUD 0.8373
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           Reel , Cut TapeSi      
HY4008W


MOSFET N Trench 80V 200A 4V @ 250uA 3.5 mΩ @ 100A,10V TO-247 (AC) RoHS
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HuaYi 682
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AUD 1.6992
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MPF13N50


500V 13A 500m@10V,6.5A 75W 3V@250uA 1 N-Channel TO-220F-3 MOSFETs ROHS
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Minos 126
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AUD 0.4175
Multiples of: 5

                   
BSC059N04LS G


MOSFET OptiMOS 3 PWR TRANS 40V 73A
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Infineon 126
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AUD 0.7155
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73 A40 V4.9 mOhmsN - Channel 1.2 V- 55 C+ 150 C50 WSmd/SmtTDSONReelSi1 Channel20 V40 nCEnhancement Optimos
STU2N80K5


N-Channel 800 V 2A (Tc) 45W (Tc) Through Hole TO-251 (IPAK)
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STMicroelectronics 126
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AUD 0.8242
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2 A800 V4.5 OhmsN - Channel 4 V- 55 C+ 150 C45 WThrough HoleIPAK - 3TubeSi1 Channel+/- 30 V9.5 nCEnhancement Mdmesh
SIRA18DP-T1-GE3


Vishay Semiconductors MOSFET 30V 7.5mOhm10V 13.3A N-Ch G-IV
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Vishay 126
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AUD 0.946
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15.5 A30 V7.5 mOhmsN - Channel 1.2 V- 55 C+ 150 C3.3 WSmd/SmtSO - 8ReelSi1 Channel- 16 v , 20 V6.9 nCEnhancement Trenchfet
HY1920W


MOSFET N Trench 200V 90A (Tc) 4V @ 250uA 25 mΩ @ 40A,10V TO-247A-3L RoHS
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HuaYi 126
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AUD 1.9089
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IAUMN04S7N011GAUMA1


MOSFETs 150 A, 40 V, Automotive Power MOSFET with OptiMOS-7 Technology
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Infineon 126
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AUD 1.8552
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           Reel , Cut Tape      OptiMOS
TK72E08N1,S1X


Toshiba MOSFET 80V N-Ch PWR FET 157A 192W 81nC
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Toshiba 126
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AUD 2.1343
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157 A80 V4.3 mOhmsn - channel    192 Wthrough holeTO - 220 - 3 si1 channel10 V81 nC   
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