MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
TK7A65W,S5X


Trans MOSFET N-CH 650V 6.8A 3-Pin TO-220SIS
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Toshiba 125
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AUD 1.5808
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6.8 A650 V640 mOhmsN - Channel 2.5 V- 55 C+ 150 C30 WThrough HoleTO - 220FP - 3TubeSi1 Channel30 V15 nCEnhancement Dtmosiv
HUFA75852G3_F085


Fairchild Semiconductor MOSFET N-CHAN UltraFET Pwr 75A 150V 0.016Ohm
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ON Semiconductor 125
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AUD 5.0567
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75 A150 V16 mOhmsN - Channel  - 55 C+ 175 C500 WThrough HoleTO - 247 - 3TubeSi1 Channel     
PSMN1R3-100ASFJ


MOSFETs PSMN1R3-100ASF/SOT8000A/CCPAK1
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Nexperia 125
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AUD 5.8457
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355 A100 V1.3 mOhmsN - Channel 4 V- 55 C+ 175 C935 WSMD/SMTCCPAK1212Reel , Cut TapeSi1 Channel- 20 V , + 20 V255 nCEnhancement  
FQU5N60CTU


Fairchild Semiconductor MOSFET N-CH600V5AQFET
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ON Semiconductor 124
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AUD 0.6682
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2.8 A600 V2 OhmsN - Channel30 V - 55 C+ 150 C2.5 WThrough HoleIPAK - 3TubeSi1 Channel30 V Enhancement  
WMK120N04TS


Transistor: N-MOSFET; unipolar; TO220-3
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Wayon 124
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AUD 0.7418
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SRT30U60FCT


TO-220F MOSFETs ROHS
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YFW Electronics 124
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AUD 0.8104
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AUIRFZ44N


International Rectifier MOSFET AUTO 55V 1 N-CH HEXFET 17.5mOhms
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Infineon 124
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AUD 1.4858
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49 A55 V17.5 mOhmsN - Channel20 V - 55 C 94 WThrough HoleTO - 220 - 3TubeSi1 Channel20 V42 nCEnhancementAec - Q101 
NTF6P02T3G


35V 6.2A 40mO@10V,5A 4.2W P Channel SOT-223-4 MOSFETs ROHS
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VBsemi Elec 119
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AUD 0.4231
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IXFH14N80P


MOSFET DIODE Id14 BVdass800
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IXYS 115
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AUD 7.5522
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14 A800 V720 mOhmsN - Channel 5.5 V- 55 C+ 150 C400 WThrough HoleTO - 247 - 3TubeSi1 Channel30 V61 nCEnhancement Hiperfet
CSD18543Q3AT


MOSFET 60-V, N channel NexFET power MOSFET, single SON 3 mm x 3 mm, 9.9 mOhm 8-VSONP -55 to 150
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Texas Instruments 12
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AUD 0.8706
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12 A60 V12 mOhmsN - Channel 1.5 V- 55 C+ 150 C66 WSmd/SmtVSONP - 8Cut TapeSi1 Channel20 V11.1 nCEnhancement Nexfet
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