MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Rds On - Drain-Source Resistance
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
DMP4025SFG-13


Diodes Incorporated MOSFET 40V P-Ch Enh Mode 25mOhm -10V -7.2A
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Diodes Incorporated 2711
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AUD 0.9472
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- 7.2 A- 40 V18 mOhmsP - Channel - 1.8 V- 55 C+ 150 C810 mWSmd/SmtPowerdi3333 - 8Cut TapeSi1 Channel20 V33.7 nCEnhancement  
IPA65R190C7XKSA1


Transistor: N-MOSFET; unipolar; 650V; 8A; 30W; TO220FP
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Infineon 150
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AUD 2.1672
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   N Channel               
PSMN2R9-100SSEJ


MOSFETs PSMN2R9-100SSE/SOT1235/LFPAK88
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Nexperia 150
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AUD 4.1209
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210 A100 V2.9 mOhmsN - Channel 3.6 V- 55 C+ 175 C341 WSMD/SMTSOT - 1235 - 4Reel , Cut TapeSi1 Channel- 20 V , + 20 V125 nCEnhancement  
FCB20N60FTM


MOSFET 600V NCH FRFET
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ON Semiconductor 150
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AUD 4.8954
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20 A600 V150 mOhmsN - Channel  - 55 C+ 150 C208 WSmd/SmtD2PAKReelSi1 Channel30 V Enhancement Superfet
BSC074N15NS5


MOSFETs TRENCH >=100V
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Infineon 150
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AUD 6.3292
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DMP2010UFV-13


MOSFET MOSFETBVDSS: 8V-24V
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Diodes Incorporated 149
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AUD 0.3865
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50 A20 V7.5 mOhmsP - Channel 1.2 V- 55 C+ 150 C2 WSMD/SMTPowerdi3333 - 8Reel , Cut TapeSi1 Channel- 10 V , 10 V103 nCEnhancement  
PJD45N06A_L2_00001


MOSFETs 60V N-Channel Enhancement Mode MOSFET
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Panjit 149
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AUD 0.5551
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AOD422


30V 50A 7mO@10V,50A N Channel TO-252-3 MOSFETs ROHS
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VBsemi Elec 149
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AUD 0.591
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2SJ530STL-E-VB


60V 30A 61m@10V 1PCSPChannel TO-252 MOSFETs ROHS
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VBsemi Elec 146
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AUD 0.8602
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IRF7341TRPBFXTMA1


MOSFETs Y
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Infineon 98
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AUD 0.4219
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4.7 A55 V50 mOhmsN - Channel 1 V- 55 C+ 150 C2 WSMD/SMTSO - 8Reel , Cut TapeSi2 Channel- 20 V , + 20 V24 nCEnhancement  
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