MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Id - Continuous Drain Current
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Vds - Drain-Source Breakdown Voltage
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Rds On - Drain-Source Resistance
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Transistor Polarity
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
FDS86240-VB


150V 1PCSNChannel SOP-8 MOSFETs ROHS
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VBsemi Elec 153
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AUD 0.8209
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PSMN1R1-30YLEX


MOSFETs PSMN1R1-30YLE/SOT669/LFPAK
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Nexperia 153
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AUD 1.4481
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265 A30 V1.3 mOhmsN - Channel 2.2 V- 55 C+ 175 C192 WSMD/SMTSOT - 669 - 5Reel , Cut TapeSi1 Channel- 20 V , + 20 V46 nCEnhancement  
TSA28N50M


MOSFET N Trench 500V 28A 4V @ 250uA 170 mΩ @ 12A,10V TO-3P RoHS
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Truesemi 153
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AUD 1.8707
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RSJ400N10FRATL


MOSFET Nch 100V Vdss 40A ID TO-263D2PAK; LPTS
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ROHM 153
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AUD 2.3
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40 A100 V27 mOhmsN - Channel 1 V- 55 C+ 150 C50 WSmd/SmtTO - 263S - 3Cut Tape 1 Channel20 V90 nCEnhancementAec - Q101 
IXTA32P05T


MOSFET 32 Amps 50V 0.036 Rds
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IXYS 153
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AUD 2.5776
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32 A50 V39 mOhmsP - Channel  - 55 C+ 150 C83 WSmd/SmtTO - 263 - 3TubeSi1 Channel15 V Enhancement  
SUP85N10-10-GE3


Vishay Semiconductors MOSFET 100V 85A 250W 10.5mohm 10V
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Vishay 153
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AUD 3.7403
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85 A100 V10.5 mOhmsN - Channel 1 V- 55 C+ 175 C250 WThrough HoleTO - 220 - 3TubeSi1 Channel20 V160 nCEnhancement Trenchfet
SI7846DP-T1-GE3


MOSFET 150V Vds 20V Vgs PowerPAK SO-8
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Vishay 153
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AUD 6.0075
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         Smd/SmtPOWERPAK - SO - 8Cut TapeSi     Trenchfet
IXFH46N65X2


MOSFET MOSFET 650V/46A Ultra Junction X2
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IXYS 151
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AUD 7.2668
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46 A650 V76 mOhmsN - Channel 2.7 V- 55 C+ 150 C660 WThrough HoleTO - 247 - 3TubeSi1 Channel30 V75 nCEnhancement Hiperfet
IPW60R099P6


Infineon Technologies MOSFET HIGH POWER PRICEPERFORM
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Infineon 149
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AUD 3.694
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6 A600 V99 OhmsN - Channel 3.5 V- 55 C+ 150 C278 WThrough HoleTO - 247 - 3TubeSi1 Channel10 V70 nCEnhancement Coolmos
IXFH50N50P3


IXYS MOSFET N-Channel: Power MOSFET wFast Diode
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IXYS 0
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AUD 6.6254
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50 A500 V120 mOhmsn - channel30 V5 V- 55 C+ 150 C960 Wthrough holeTO - 247 - 3Tubesi1 channel30 V85 nCenhancement polar3, hiperfet
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