MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
DMG302PU-7


MOSFETs 25V P-Ch Enh FET 27.2pF 0.35nC
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Diodes Incorporated 155
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AUD 0.3624
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DMG3401LSNQ-7


MOSFETs MOSFET BVDSS: 25V-30V SC59 T&R 3K
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Diodes Incorporated 155
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AUD 0.3973
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FDB024N08BL7(TOKMAS)


85V 220A 2.4m@10V,30A 1PCSNChannel TO-263-7L MOSFETs ROHS
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Tokmas 155
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AUD 1.0917
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IRFP260NPBF


TO-247S MOSFETs ROHS
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OSEN 155
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AUD 1.166
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DMP32M6SPS-13


MOSFETs MOSFET BVDSS: 25V-30V PowerDI5060-8 T&R 2.5K
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Diodes Incorporated 155
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AUD 1.4049
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100 A30 V2.6 mOhmsP - Channel 2.5 V- 55 C+ 150 C1.3 WSMD/SMTPowerdi5060 - 8Reel , Cut TapeSi1 Channel- 20 V , 20 V158 nCEnhancement  
IAUMN04S7N006GAUMA1


MOSFETs 200 A, 40 V, Automotive Power MOSFET with OptiMOS-7 Technology
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Infineon 155
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AUD 2.3149
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           Reel , Cut Tape      OptiMOS
TK20A60W,S5VX(M


Transistor: N-MOSFET; unipolar; 600V; 20A; 45W; TO220FP
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Toshiba 155
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AUD 4.4716
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R6035ENZC8


N-Channel 600 V 35A (Tc) 120W (Tc) Through Hole TO-3PF
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ROHM 155
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AUD 6.8699
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35 A600 V92 mOhmsN - Channel 2 V- 55 C+ 150 C120 WThrough HoleTO - 3PF - 3BulkSi1 Channel20 V110 nCEnhancement  
IRF840BPBF


Vishay Semiconductors MOSFET 500V 850mOhm10V 8.7A N-Ch D-SRS
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Vishay 145
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AUD 1.0163
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4.5 A500 V850 mOhmsN - Channel 3 V- 55 C+ 150 C156 WThrough HoleTO - 220 - 3TubeSi1 Channel10 V30 nCEnhancement  
P6F50HP2-5600


MOSFET High Switching Speed High Voltage
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Shindengen 67
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AUD 1.003
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            Hi - Potmos2      
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