MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IXTH11P50


MOSFET -11 Amps -500V 0.75 Rds
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IXYS 765
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AUD 13.003
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11 A500 V750 mOhmsP - Channel 122 mV- 55 C+ 150 C300 WThrough HoleTO - 247 - 3TubeSi1 Channel20 V130 nCEnhancement  
IPA80R460CEXKSA2


MOSFET CONSUMER
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Infineon 482
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AUD 1.8468
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           Tube       
TK40E10N1,S1X


Toshiba MOSFET 40V N0Ch PWR FET 90A 126W 3000pF
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Toshiba 154
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AUD 1.6418
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90 A40 V8.2 mOhmsn - channel    126 Wthrough holeTO - 220 - 3 si1 channel10 V    
FQB55N10TM


Transistor: N-MOSFET; unipolar; 100V; 38.9A; 155W; D2PAK
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ON Semiconductor 154
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AUD 2.1733
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            Qfet®      
FCH104N60F_F085


Fairchild Semiconductor MOSFET 600V N-Channel SuperFET II MOSFET
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ON Semiconductor 154
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AUD 6.1567
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37 A600 V275 mOhmsn - channel 3 V- 55 C+ 150 C357 Wthrough holeTO - 247 - 3Tubesi1 channel+/- 20 V109 nCenhancement superfet ii
IPD78CN10N G


Trans MOSFET N-CH 100V 13A 3-Pin(2+Tab) DPAK
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Infineon 154
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AUD 0.673
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                enhancement  
NX5020UNBKSX


MOSFETs NX5020UNBKS/SOT363/SC-88
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Nexperia 153
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AUD 0.1051
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480 mA50 V6 OhmsN - Channel 950 mV- 55 C+ 150 C860 mWSMD/SMTTSSOP - 6Reel , Cut TapeSi2 Channel- 20 V , + 20 V600 pCEnhancement  
SI1050X-T1-GE3


N-Channel 8 V 1.34A (Ta) 236mW (Ta) Surface Mount SC-89 (SOT-563F)
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Vishay 153
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AUD 0.3812
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1.34 A8 V86 mOhmsN - Channel 350 mV- 55 C+ 150 C236 mWSmd/SmtSC - 89 - 6ReelSi1 Channel4.5 V7.7 nCEnhancement Trenchfet
STQ1NK80ZR-AP


N-Channel 800 V 300mA (Tc) 3W (Tc) Through Hole TO-92-3
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STMicroelectronics 153
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AUD 0.781
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300 mA800 V16 OhmsN - Channel  - 55 C+ 150 C3 WThrough HoleTO - 92Ammo PackSi1 Channel30 V Enhancement  
LM5D40N10


DFN5x6-8L MOSFETs ROHS
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Leiditech 151
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AUD 0.6651
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