MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
NID9N05ACLT4G-VB


60V 18A 1PCSNChannel TO-252 MOSFETs ROHS
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VBsemi Elec 150
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AUD 0.3456
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FDS6910-NL-VB


30V 2 N-Channel SOP-8 MOSFETs ROHS
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VBsemi Elec 150
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AUD 0.3579
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MS10N65F


TO-220F MOSFETs ROHS
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MSKSEMI 150
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AUD 0.3832
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WMO20N15T2


Transistor: N-MOSFET; unipolar; TO252
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Wayon 150
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AUD 0.6185
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FDD5N50FTM_WS


MOSFET UniFET 500V 3.5A
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ON Semiconductor 150
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AUD 0.6452
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3.5 A500 V1.55 OhmsN - Channel  - 55 C+ 150 C40 WSmd/SmtTO - 252 - 3ReelSi1 Channel30 V Enhancement  
WMK100N07TS


Transistor: N-MOSFET; unipolar; TO220-3
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Wayon 150
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AUD 0.9507
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IRLZ24NS-VB


- MOSFETs ROHS
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VBsemi Elec 150
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AUD 1.0729
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FDB33N25TM-JSM


TO-263-2L MOSFETs ROHS
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JSMSEMI 150
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AUD 2.0836
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VBE2412


MOSFET P Trench 40V 50A 2.5V @ 250uA 18 mΩ @ 14A,4.5V TO-252 RoHS
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VBsemi Elec 117
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AUD 1.0605
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DMN61D8LVTQ-7


Diodes Incorporated MOSFET N-Ch Enh Mode FET 41 to 60V Low Rdson
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Diodes Incorporated 72
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AUD 0.4681
Multiples of: 5

630 mA60 V2.4 OhmsN - Channel 1.3 V- 55 C+ 150 C1.09 WSmd/SmtTSOT - 26 - 6ReelSi1 Channel+/- 12 V0.74 nCEnhancementAec - Q101 
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