MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

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Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
Hot TP0604N3-G


Transistor: P-MOSFET; unipolar; -40V; -2A; 740mW; TO92
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Microchip 267
Ships to you
between Wed. 05 Aug to Tue. 11 Aug
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AUD 1.6267

Multiples of: 1

430 mA40 V2 OhmsP - Channel 1 V- 55 C+ 150 C0.74 WThrough HoleTO - 92BulkSi1 Channel- 10 V Enhancement  
TK10A80E,S4X


Toshiba MOSFET PLN MOS 800V 1000m (VGS=10V) TO-220SIS
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Toshiba 156
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between Tue. 11 Aug to Thu. 13 Aug
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AUD 1.9701

Multiples of: 1

10 A800 V700 mOhmsN - Channel30 V4 V- 55 C+ 150 C50 WThrough HoleTO - 220 - 3ReelSi1 Channel30 V46 nCEnhancement Dtmosiv
TK16J60W,S1VE


MOSFET TO-3PN PD=130W 1MHz PWR MOSFET TRNS
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Toshiba 156
Ships to you
between Tue. 11 Aug to Thu. 13 Aug
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AUD 4.6154

Multiples of: 1

15.8 A600 V190 mOhmsN - Channel 3.7 V- 55 C+ 150 C130 WThrough HoleTO - 3PN - 3TubeSi1 Channel30 V38 nCEnhancement Dtmosiv
IMT65R048M1HXUMA1


MOSFETs Y
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Infineon 156
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between Tue. 11 Aug to Thu. 13 Aug
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AUD 7.191

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           Reel , Cut Tape      CoolSiC
PJM2305PSA


MOSFET P Trench 12V 4.1A 900mV @ 250uA 60 mΩ @ 3.5A,4.5V SOT-23 RoHS
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Pingjingsemi 155
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between Wed. 19 Aug to Mon. 24 Aug
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AUD 0.0248

Multiples of: 10

                   
SSM3K15ACT


30V 800mA 155mW 450m@4.5V,0.5A 1.2V@250uA DFN-3L(1x0.6) MOSFETs ROHS
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TECH PUBLIC 155
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between Wed. 19 Aug to Mon. 24 Aug
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AUD 0.032

Multiples of: 20

                   
BSS84PH6327-MS


55V 300mA 1W 4.5Ω@10V P Channel SOT-23 MOSFETs ROHS
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MSKSEMI 155
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between Wed. 19 Aug to Mon. 24 Aug
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AUD 0.0391

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IPW65R099C6


Infineon Technologies MOSFET N-Ch 700V 38A TO247-3
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Infineon 152
Ships to you
between Tue. 11 Aug to Thu. 13 Aug
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AUD 5.7299

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38 A650 V89 mOhmsN - Channel 3 V- 55 C+ 150 C278 WThrough HoleTO - 247 - 3Tube-1 Channel+/- 20 V127 nCEnhancement Coolmos
IRLML2402


SOT-23 MOSFETs ROHS
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Youtai 135
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between Wed. 19 Aug to Mon. 24 Aug
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AUD 0.0262

Multiples of: 20

                   
SI2312A


MOSFET N Trench 20V 3.77A 850mV @ 250uA 33 mΩ @ 5A,4.5V SOT-23 RoHS
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Youtai 135
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between Wed. 19 Aug to Mon. 24 Aug
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AUD 0.03

Multiples of: 20

                   
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