MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SVG086R0NT


TO-252 MOSFETs ROHS
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Silan 159
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AUD 0.9021
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P34F6EL-5600


MOSFET 60V, 34A EETMOS POWER MOSFET
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Shindengen 159
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AUD 1.1075
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            EETMOS2      
Hot TK5A65D(STA4,Q,M)


Toshiba MOSFET N-Ch FET 650V 2.6s IDSS 10 uA 1.2 Ohm
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Toshiba 159
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AUD 1.146
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5 A650 V1.43 OhmsN - Channel     Through HoleSC - 62 - 3ReelSi1 Channel     
IPW60R125C6FKSA1


Transistor: N-MOSFET; unipolar; 600V; 30A; 219W; PG-TO247-3
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Infineon 159
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AUD 4.006
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            Coolmos C6      
QM3202S-VB


30V 20m@10V 1.5V 2 N-Channel TSSOP-8 MOSFETs ROHS
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VBsemi Elec 158
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AUD 0.3538
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IAUCN08S7L110ATMA1


MOSFETs MOSFET_(75V 120V(
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Infineon 158
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AUD 0.6206
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50 A80 V11 mOhmsN - Channel 2 V- 55 C+ 175 C58 WSMD/SMTTDSON - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V14.8 nCEnhancement  
IRLR3636TRPBF


60V 97A 6.3mO@10V,97A N Channel TO-252 MOSFETs ROHS
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VBsemi Elec 158
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AUD 0.9057
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BUK768R3-60E,118


NXP Semiconductors MOSFET
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Nexperia 158
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AUD 1.3528
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           Reel       
BSC252N10NSF G


MOSFET OptiMOS2 PWR Transistor N-CH
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Infineon 105
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AUD 1.0278
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40 A100 V19.5 mOhmsN - Channel 2 V- 55 C+ 150 C78 WSmd/SmtTDSON - 8ReelSi1 Channel20 V17 nCEnhancement Optimos
IRFH9310TRPBF


P-Channel 30 V 21A (Ta), 40A (Tc) 3.1W (Ta) Surface Mount PQFN (5x6)
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Infineon 6
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AUD 2.8963
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21 A30 V4.6 mOhmsP - Channel    3.1 WSmd/SmtPQFN - 8ReelSi1 Channel20 V165 nC   
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