MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SI2399DS-T1-GE3


Vishay Semiconductors MOSFET -20V -6A 2.5W
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Vishay 14550
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AUD 0.2575
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6 A20 V34 mOhmsP - Channel 600 mV- 55 C+ 150 C2.5 WSmd/SmtSOT - 23 - 3ReelSi1 Channel- 10 V10 nCEnhancement Trenchfet
PSMN5R0-40MSHX


MOSFET PSMN5R0-40MSHX
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Nexperia 398
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AUD 0.6846
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85 A40 V5 mOhmsN - Channel 3.6 V- 55 C+ 175 C83 WSMD/SMTLFPAK - 33 - 4Cut Tape , Reel , ReelSi1 Channel- 20 V , + 20 V21 nCEnhancement  
IRF820SPBF


MOSFET N-Chan 500V 2.5 Amp
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Vishay 157
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AUD 1.3249
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   N - Channel  - 55 C+ 150 C Smd/SmtD2PAK - 2TubeSi      
WML16N70C2


Transistor: N-MOSFET; SJ-MOSFET C2; unipolar; 700V; 12A; 31W
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Wayon 157
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AUD 1.6507
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            Sj - Mosfet C2      
IXTF1N450


MOSFET 4500V 0.9A HV Power MOSFET
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IXYS 157
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AUD 158.6627
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900 mA4.5 kV95 Ohmsn - channel20 V3.5 v to 6 V- 55 C+ 150 C165 Wthrough holeISOPLUS I4 - PAK - 3Tubesi1 channel10 V40 nCenhancement  
AOD400


30V 21.8A 7mO@10V,21.8A 3.25W N Channel TO-252 MOSFETs ROHS
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VBsemi Elec 156
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AUD 0.3266
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SP40N02ATD


TO-263 MOSFETs ROHS
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Siliup 156
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AUD 0.401
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CSD17579Q3A


Texas Instruments MOSFET CSD17579Q3A 30 V 8-VSONP
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Texas Instruments 151
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AUD 0.4213
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39 A30 V10.2 mOhmsN - Channel 1.1 V- 55 C+ 150 C29 WSmd/SmtVSONP - 8ReelSi1 Channel10 V15 nCEnhancement Nexfet
LR7843-VB


30V 120A 2.3m@10V,120A 1PCSNChannel TO-252 MOSFETs ROHS
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VBsemi Elec 141
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AUD 1.2098
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CPC5602CTR


Trans MOSFET N-CH Si 350V 0.005A 4-Pin(3+Tab) SOT-223 T/R
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IXYS 103
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AUD 1.5463
Multiples of: 1

5 mA350 V14 OhmsN - Channel  - 40 C+ 85 C2.5 WSmd/SmtSOT - 223 - 3Cut TapeSi1 Channel20 V Depletion Clare
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