MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
FDMS10C4D2N


MOSFET Energy Inversion DC-AC
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ON Semiconductor 2106
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AUD 2.3642
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         Smd/SmtPOWER - 56 - 8Cut TapeSi      
HYG042N10NS1B


100V 160A 3.5mΩ@10V,50A 200W 3V@250uA 240pF@25V N Channel 7.04nF@25V 119nC@10V -55℃~+175℃@(Tj) TO-263-2L MOSFETs ROHS
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HuaYi 161
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AUD 0.7473
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IPB057N15NM6ATMA1


MOSFETs OptiMOS 6 power MOSFET 150 V normal level in DPAK 3-pin package
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Infineon 161
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AUD 1.604
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128 A150 V5.4 mOhmsN - Channel 4 V- 55 C+ 175 C211 WSMD/SMT Reel , Cut TapeSi1 Channel+ 20 V44 nCEnhancement OptiMOS
PSMN1R5-30BLEJ


MOSFET N-channel 30 V 1.5 mo FET
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Nexperia 161
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AUD 2.7111
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120 A30 V1.3 mOhmsN - Channel20 V1.7 V- 55 C+ 175 C401 WSmd/SmtD2PAK - 2ReelSi1 Channel20 V228 nCEnhancement  
IPB014N06N


Infineon Technologies MOSFET N-Ch 60V 180A D2PAK-6
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Infineon 161
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AUD 3.7786
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180 A60 V1.4 mOhmsN - Channel20 V2.1 V- 55 C+ 175 C214 WSmd/SmtD2PAK - 7ReelSi1 Channel20 V106 nCEnhancement Optimos
WML071N15HG2


Transistor: N-MOSFET; unipolar; TO220FP
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Wayon 161
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AUD 3.991
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IPW65R060CM8XKSA1


MOSFETs 650V CoolMOS CM8 Power Transistor
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Infineon 161
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AUD 5.5657
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45 A650 V60 mOhmsN - Channel 4.7 V- 55 C+ 150 C227 WThrough HolePG - TO247 - 3TubeSi1 Channel- 20 V to + 20 V52 nCEnhancement CoolMOS
IPZ65R019C7XKSA1


Transistor: N-MOSFET; unipolar; 650V; 75A; 446W; PG-TO247-4
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Infineon 161
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AUD 21.9672
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            Coolmos C7      
WGP18N65SE


TO-220 MOSFETs ROHS
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Wild Goose 161
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AUD 0.5757
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IXTA94N20X4


N-Channel 200V 94A (Tc) 360W (Tc) Surface Mount TO-263 (IXTA)
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IXYS 0
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AUD 14.5791
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94 A200 V10.6 mOhmsN - Channel 4.5 V- 55 C+ 175 C360 WSMD/SMTTO - 263 - 3TubeSi1 Channel- 20 V , 20 V77 nCEnhancement  
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