MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Id - Continuous Drain Current
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Vds - Drain-Source Breakdown Voltage
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Rds On - Drain-Source Resistance
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Qg - Gate Charge
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First...19961997199819992000...
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SIHB24N80AE-GE3


N-Channel 800V 21A (Tc) 208W (Tc) Surface Mount D2PAK (TO-263)
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Vishay 163
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AUD 4.4048
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21 A800 V184 mOhmsN - Channel 4 V- 55 C+ 150 C208 WSMD/SMTTO - 263 - 4TubeSi1 Channel- 30 V , + 30 V59 nCEnhancement  
OSD65R550


650V 7A 35W 550m TO-252 MOSFETs ROHS
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OSEN 162
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AUD 0.5037
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PSMN015-100YSFX


MOSFETs NextPower 100 V, 15.5 mOhm N-channel MOSFET in LFPAK56 package
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Nexperia 162
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AUD 0.6091
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55 A100 V15.5 mOhmsN - Channel 4 V- 55 C+ 175 C105 WSMD/SMTSO8 - 4Reel , Cut TapeSi1 Channel- 20 V , + 20 V24 nCEnhancement  
IPP028N08N3 G


MOSFET OptiMOS 3 PWR TRANST 80V 100A
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Infineon 162
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AUD 3.4806
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100 A80 V2.8 mOhmsN - Channel  - 55 C+ 175 C300 WThrough HoleTO - 220TubeSi1 Channel20 V Enhancement Optimos
IPB80N08S2-07


MOSFET OptiMOS PWR TRANST 75V 80A
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Infineon 162
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AUD 4.381
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80 A75 V6.5 mOhmsN - Channel  - 55 C+ 175 C300 WSmd/SmtTO - 263ReelSi1 Channel20 V EnhancementAec - Q101Optimos
IXTP2R4N120P


MOSFET 2.4 Amps 1200V 7.5 Rds
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IXYS 162
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AUD 6.8299
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2.4 A1.2 kV7.5 OhmsN - Channel  - 55 C+ 150 C125 WThrough HoleTO - 220 - 3TubeSi1 Channel20 V Enhancement  
CJQ16P03


30V 16A 5.1mΩ@10V 2.2V P Channel SOP-8 MOSFETs ROHS
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Changjing Electronics Technology 161
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AUD 0.7042
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DMN3016LPS-13


MOSFET N-Ch 30V Enh FET 20Vgss 1.18W 1415pF
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Diodes Incorporated 161
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AUD 0.3103
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10.8 A30 V16 mOhmsN - Channel 1.4 V- 55 C+ 150 C1.18 WSmd/SmtPowerdi5060 - 8ReelSi1 Channel+/- 20 v , +/- 20 V25.1 nCEnhancement Powerdi
IRF7319TRPBF-VB


30V 8A 18mΩ@10V 1PCSN-Channel&1PCSP-Channel SO-8 MOSFETs ROHS
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VBsemi Elec 156
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AUD 0.5372
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FDS4675


Transistor: P-MOSFET; unipolar; -40V; -11A; 2.4W; SO8
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ON Semiconductor 1
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AUD 1.1993
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First...19961997199819992000...

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