MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Id - Continuous Drain Current
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Vds - Drain-Source Breakdown Voltage
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Rds On - Drain-Source Resistance
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Transistor Polarity
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Minimum Operating Temperature
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Maximum Operating Temperature
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Pd - Power Dissipation
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Mounting Style
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Vgs - Gate-Source Voltage
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Qg - Gate Charge
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Channel Mode
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SI4477DY-T1-E3-VB


30V 13.5A 11mΩ@10V 5W P Channel SOP8 MOSFETs ROHS
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VBsemi Elec 165
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AUD 0.4896
Multiples of: 1

                   
SMG2329S-VB


SOT-23 MOSFETs ROHS
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VBsemi Elec 164
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AUD 0.3379
Multiples of: 5

                   
AONR21357(XBLW)


30V 50A 1PCSPChannel DFN-8L(3x3) MOSFETs ROHS
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XBLW 164
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AUD 0.3437
Multiples of: 5

                   
SMF12N60


600V 12A 800mO@10V,6A 51W N Channel TO-220F-3 MOSFETs ROHS
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HUAKE 164
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AUD 0.4378
Multiples of: 1

                   
JCS4N80FC


800V 4A 1.9@10V,2A 38.2W 4V@250uA 1PCSNChannel TO-220MF MOSFETs ROHS
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Jilin 164
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AUD 0.7131
Multiples of: 1

                   
IRFR430ATRPBF


MOSFET N Trench 500V 5A 4.5V @ 250uA 1.7 Ω @ 3A,10V TO-252-2 (DPAK) RoHS
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Infineon 164
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AUD 1.3526
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STP13NM60ND


N-Channel 600 V 11A (Tc) 109W (Tc) Through Hole TO-220
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STMicroelectronics 164
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AUD 2.6119
Multiples of: 1000

11 A650 V380 mOhmsN - Channel25 V4 V- 55 C+ 150 C109 WThrough HoleTO - 220 - 3TubeSi1 Channel25 V24.5 nC   
FQA36P15


Transistor: P-MOSFET; unipolar; -150V; -25.5A; 294W; TO3PN
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ON Semiconductor 164
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AUD 4.416
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            qfet®      
FDMT800100DC


Fairchild Semiconductor MOSFET
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ON Semiconductor 164
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AUD 7.8172
Multiples of: 1

162 A100 V5.39 mOhmsN - Channel 2 V- 55 C+ 150 C156 WSmd/SmtPOWER88 - 8ReelSi1 Channel+/- 20 V79 nCEnhancement Dual Cool 88
IXFX120N25P


MOSFET 120 Amps 250 V 0.24 Ohm Rds
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IXYS 164
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AUD 19.8657
Multiples of: 1

120 A250 V24 mOhmsN - Channel 5 V- 55 C+ 175 C700 WThrough HoleTO - 247 - 3TubeSi1 Channel- 20 V , 20 V185 nCEnhancement HiPerFET
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First...19961997199819992000...

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