MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Id - Continuous Drain Current
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Vds - Drain-Source Breakdown Voltage
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Rds On - Drain-Source Resistance
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IXFP16N50P3


MOSFET Polar3 HiPerFET Power MOSFET
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IXYS 189
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AUD 5.6209
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16 A500 V360 mOhmsN - Channel     Through HoleTO - 220 - 3TubeSi1 Channel    Hyperfet
FDS86240


MOSFET 150V N-Channel PowerTrench MOSFET
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ON Semiconductor 185
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AUD 2.3601
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7.5 A150 V17.3 mOhmsN - Channel 4 V- 55 C+ 150 C5 WSmd/SmtSO - 8ReelSi1 Channel20 V16 nC  Powertrench
IXTH76N25T


MOSFET 76 Amps 250V 39 Rds
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IXYS 185
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AUD 6.6493
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76 A250 V39 mOhmsN - Channel  - 55 C+ 150 C460 WThrough HoleTO - 247 - 3TubeSi1 Channel30 V Enhancement  
KWPM2341-3


20V 3.7A 50mΩ@4.5V,3.7A 1.1W 1.2V@250uA P Channel SOT-23 MOSFETs ROHS
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Yongyutai Electronics 184
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AUD 0.0288
Multiples of: 10

                   
SN7002N-VB


60V 1PCSNChannel SOT-23 MOSFETs ROHS
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VBsemi Elec 184
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AUD 0.0516
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STF16N65M2


STMicroelectronics MOSFET
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STMicroelectronics 183
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AUD 1.4349
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11 A650 V320 mOhmsn - channel25 V2 V- 55 C+ 150 C25 Wthrough holeTO - 220FP - 3Tubesi1 channel25 V19.5 nCenhancement  
SPP24N60C3XKSA1


MOSFET N-Ch 650V 24.3A TO220-3
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Infineon 127
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AUD 4.8761
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24.3 A600 V160 mOhmsN - Channel     Through HoleTO - 220 - 3TubeSi1 Channel    Coolmos
SI2333AI-MS


18V 6.5A 28mΩ@4.5V P Channel SOT-23 MOSFETs ROHS
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MSKSEMI 126
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AUD 0.0486
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Hot FDBL9403-F085T6


N-Channel 40V 50A (Ta), 300A (Tc) 4.3W (Ta), 159.6W (Tc) Surface Mount 8-HPSOF
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ON Semiconductor 2
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AUD 3.0454
Multiples of: 1

300 A40 V950 mOhmsN - Channel 4 V- 55 C+ 175 C159.6 WSMD/SMTTO - LL8 - 8 Si1 Channel- 20 V , + 20 V108 nCEnhancement  
IRFP22N60KPBF


N-Channel 600 V 22A (Tc) 370W (Tc) Through Hole TO-247AC
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Vishay 1
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AUD 6.9906
Multiples of: 1

   N - Channel  - 55 C+ 150 C Through HoleTO - 247ACTubeSi      
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