MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SI7106DN-T1-E3


MOSFET 20V Vds 12V Vgs PowerPAK 1212-8
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Vishay 2910
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AUD 1.1007
Multiples of: 3000

   N - Channel  - 55 C+ 150 C Smd/SmtPOWERPAK 1212 - 8Reel      Trenchfet/Powerpak
FGW40XS120C


TO-247 MOSFETs ROHS
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Fuji 188
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AUD 2.5265
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AOB2904


Transistor: N-MOSFET; unipolar; 100V; 120A; 163W; TO263
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Alpha & Omega 188
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AUD 2.6537
Multiples of: 1

                   
IPZA60R055CM8XKSA1


MOSFETs 600V CoolMOS CM8 Power Transistor
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Infineon 188
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AUD 5.9269
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44 A600 V55 mOhmsN - Channel 4.7 V- 55 C+ 150 C227 WThrough Hole TubeSi1 Channel20 V51 nCEnhancement CoolMOS
SP30N01GTQ


30V 160A 1.65m 1 N-Channel TO-220-3L MOSFETs ROHS
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Siliup 187
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AUD 0.4999
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STP7NK40Z


Transistor: N-MOSFET; unipolar; 400V; 3.4A; 70W; TO220-3
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STMicroelectronics 187
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AUD 0.9194
Multiples of: 1

            Supermesh      
WMP14N60C2


Transistor: N-MOSFET; SJ-MOSFET C2; unipolar; 600V; 11A; 85W; TO251
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Wayon 187
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AUD 1.097
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            Sj - Mosfet C2      
IRL1404ZSPBF-VB


40V 150A 1.7m@10V 1PCSNChannel TO-263 MOSFETs ROHS
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VBsemi Elec 187
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AUD 2.5068
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FDA8440


MOSFET 40V 100A 2.1mOhm N-Chan Power Trench
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ON Semiconductor 187
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AUD 6.009
Multiples of: 1

30 A40 V2.1 mOhmsN - Channel  - 55 C+ 175 C306 WThrough HoleTO - 3PNTubeSi1 Channel20 V Enhancement Powertrench
WMK071N15HG2


Transistor: N-MOSFET; unipolar; TO220-3
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Wayon 177
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AUD 4.1373
Multiples of: 1

                   
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