MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IRL7472L1TRPBF


MOSFET 40V, 375A, .59 mOhm 220 nC Qg, Logic Lvl
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Infineon 186
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AUD 3.7925
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564 A40 V970 uOhmsN Channel 1 V- 55 C+ 175 C341 WSmd/SmtDirectfet - L8Cut TapeSi1 Channel20 V220 nCEnhancement Strongirfet
UF3C065040B3


MOSFET 650V/40mOhm, SiC, FAST CASCODE, G3, D2PAK-3L
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UnitedSiC 186
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AUD 15.3179
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41 A650 V52 mOhmsN - Channel25 V - 55 C+ 175 C176 WSmd/SmtD2PAK - 3TubeSic      
IXTH500N04T2


MOSFET TRENCHT2 PWR MOSFET 40V 500A
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IXYS 186
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AUD 17.5507
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500 A40 V1.6 mOhmsn - channel 3.5 V- 55 C+ 175 C1 kWthrough holeTO - 247 - 3Tubesi 20 V405 nCenhancement hiperfet
STD12NF06T4


60V 18.2A 73mO@10V,18.2A N Channel TO-252-3 MOSFETs ROHS
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VBsemi Elec 185
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AUD 0.3528
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BSC050N03LS G


Infineon Technologies MOSFET N-Ch 30V 79A TDSON-8 OptiMOS 3
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Infineon 185
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AUD 0.376
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18 A30 V5 mOhmsN - Channel 1 V- 55 C+ 150 C2.5 WSmd/SmtTDSON - 8ReelSi1 Channel20 V26 nCEnhancement Optimos
WMQ023N03LG2


Transistor: N-MOSFET; unipolar; PDFN3030-8
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Wayon 185
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AUD 0.7501
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STD4NK80ZT4-VB


800V 2A 1PCSNChannel TO-252 MOSFETs ROHS
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VBsemi Elec 185
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AUD 1.1721
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ASA80R900E


850V 8.5A 710m 43W 3.5V TO-220F MOSFETs ROHS
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ANHI 184
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AUD 0.6218
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NCEP026N10D


TO-263 MOSFETs ROHS
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NCE Power 166
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AUD 2.2009
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SIDR5102EP-T1-RE3


MOSFETs SOT669 100V 126A N-CH MOSFET
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Vishay 82
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AUD 2.3149
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8.9 A100 V5.6 mOhms  4 V- 55 C+ 175 C7.5 W  Reel , Cut TapeSi - 20 V , + 20 V20 nC   
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