MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Rds On - Drain-Source Resistance
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IXFH42N60P3


MOSFET 600V 42A 0.185Ohm PolarP3 Power MOSFET
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IXYS 194
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AUD 11.3776
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42 A600 V185 mOhmsn - channel 5 V  830 Wthrough holeTO - 247 - 3Tubesi1 channel30 V78 nC  hiperfet
APT5020BVFRG


MOSFET FG, FREDFET, 500V, TO-247, RoHS
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Microchip 194
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AUD 15.709
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           TubeSi      
IXFK32N100Q3


MOSFET Q3Class HiPerFET Pwr MOSFET 1000V/32A
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IXYS 194
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AUD 51.3254
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32 A1 kV320 mOhmsN - Channel   + 150 C1.25 kWThrough HoleTO - 264 - 3TubeSi1 Channel30 V195 nC  Hiperfet
DMN4036LK3-13


MOSFET ENHANCE MODE MOSFET 40V N-CHANNEL
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Diodes Incorporated 193
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AUD 0.3563
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12.2 A40 V26 mOhmsN - Channel 1 V- 55 C+ 150 C4.12 WSmd/SmtTO - 252 - 3Cut TapeSi1 Channel20 V9.2 nCEnhancement  
TPM2505PY3


SOT-223 MOSFETs ROHS
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TECH PUBLIC 193
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AUD 0.3923
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SQ4946AEY-T1_GE3-HXY


60V 6.5A 32m 2 N-Channel SOP-8 MOSFETs ROHS
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HXY MOS 193
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AUD 0.5035
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RQ6E060ATTCR


MOSFET PCH -30V -6A MIDDLE POWER
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ROHM 193
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AUD 0.5445
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6 A30 V26.4 mOhmsP - Channel 1 V- 55 C+ 150 C1.25 WSmd/SmtSOT - 457T - 6Cut TapeSi1 Channel20 V25.9 nCEnhancement  
WSF40130


40V 120A 2.4m@10V,20A 125W 2.6V@250uA 1PCSNChannel TO-252 MOSFETs ROHS
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Winsok 193
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AUD 0.6502
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VBL2202K


200V 2@10V 1PCSPChannel TO-263 MOSFETs ROHS
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VBsemi Elec 193
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AUD 0.699
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ZXMN3A04DN8TA


MOSFET Dl 30V N-Chnl UMOS
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Diodes Incorporated 193
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AUD 1.7075
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8.5 A30 V30 mOhmsN - channel  - 55 C+ 150 C2.15 WSmd/smtSOIC - 8ReelSi2 Channel20 V Enhancement  
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