MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IPL60R199CP


Infineon Technologies MOSFET N-Ch 600V 16.4A ThinPAK-4 CoolMOS CP
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Infineon 1261
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AUD 2.5119
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16.4 A600 V199 mOhmsN - Channel 3.5 V- 40 C+ 150 C139 WSmd/SmtTH in PAK - 5 8X8ReelSi1 Channel 32 nC  Coolmos
WSK250N03


30V 250A null TO-263-2 MOSFETs ROHS
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Winsok 232
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AUD 1.2243
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FDT1600N10ALZ


Fairchild Semiconductor MOSFET 100V 160mOhm SOT223 GREEN EMC
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ON Semiconductor 191
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AUD 0.7522
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5.6 A100 V156 mOhmsn - channel 2.8 V- 55 C+ 150 C10.42 Wsmd/smtSOT - 223 - 3Reelsi  3.8 nC  powertrench
SL11N65CF1


TO-220F MOSFETs ROHS
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SLKORMICRO 191
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AUD 0.9257
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AGM4008LL


TOLL-8 MOSFETs ROHS
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AGM-Semi 191
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AUD 1.274
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IPP052N08N5


MOSFET TRENCH 40<-<100V
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Infineon 191
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AUD 1.7473
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TK6Q60W,S1VQ


Toshiba MOSFET DTMOSIV 600V 820mOhm 6.2A 60W 390pF 12nC
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Toshiba 191
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AUD 1.7567
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6.2 A600 V680 mOhmsN - Channel 2.7 v to 3.7 V- 55 C+ 150 C60 WThrough HoleIPAK - 3ReelSi1 Channel30 V12 nC  Dtmosiv
TK9R7A15Q5,S4X


MOSFETs 150V UMOS10-HSD TO-220SIS 9.7mohm
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Toshiba 191
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AUD 2.7582
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49 A150 V9.7 mOhmsN - Channel 4.5 V- 55 C+ 175 C45 WThrough HoleTO - 220SIS - 3TubeSi1 Channel- 20 V , + 20 V50 nCEnhancement  
IXTH60N20L2


MOSFET LINEAR L2 SERIES MOSFET 200V 60A
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IXYS 74
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AUD 23.3134
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60 A200 V45 mOhmsn - channel 4.5 V- 55 C+ 150 C540 Wthrough holeTO - 247 - 3Tubesi1 channel20 V255 nCenhancement linear l2
CSD19536KTT


MOSFET 100-V, N channel NexFET power MOSFET, single D2PAK, 2.4 mOhm 3-DDPAK/TO-263 -55 to 175
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Texas Instruments 22
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AUD 4.6839
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272 A100 V2.4 mOhmsN - Channel 2.1 V- 55 C+ 175 C375 WSmd/SmtTO - 263 - 3ReelSi1 Channel10 V118 nCEnhancement Nexfet
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