MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
AUIRLR024N


Transistor: N-MOSFET; unipolar; 55V; 17A; 45W; DPAK
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Infineon 190
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AUD 1.0721
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            Hexfet®      
WSK42P10


TO-263-2L MOSFETs ROHS
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Winsok 190
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AUD 1.3309
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STD70N10F4-VB


100V 70A N Channel TO-252 MOSFETs ROHS
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VBsemi Elec 190
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AUD 1.4933
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NTD20N06T4G


MOSFET 60V 20A N-Channel
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ON Semiconductor 190
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AUD 1.5778
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20 A60 V37.5 mOhmsN - Channel  - 55 C+ 175 C60 WSmd/SmtDPAKReelSi1 Channel20 V Enhancement  
NTP165N65S3H


MOSFET SUPERFET3 FAST 165MOHM TO-220
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ON Semiconductor 190
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AUD 1.9265
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19 A650 V165 mOhmsN - Channel 4 V- 55 C+ 150 C142 WThrough HoleTO - 220 - 3TubeSi1 Channel- 30 V , 30 V35 nCEnhancement  
PJMP120N60EC_T0_00001


MOSFET 600V/ 360mohm Super Junction Easy version Gen.1.5
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Panjit 190
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AUD 4.0746
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30 A600 V120 OhmsN - Channel 4 V- 55 C+ 150 C235 WThrough Hole Reel , Cut TapeSi1 Channel- 30 V , + 30 V51 nCEnhancement  
IPP111N15N3 G


Infineon Technologies MOSFET N-Ch 150V 83A TO220-3 OptiMOS 3
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Infineon 190
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AUD 4.4722
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83 A150 V10.8 mOhmsN - Channel20 V2 V- 55 C+ 175 C214 WThrough HoleTO - 220 - 3TubeSi1 Channel20 V41 nCEnhancement Optimos
IPT010N08NM5ATMA1


MOSFET TRENCH 40<-<100V
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Infineon 190
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AUD 9.5227
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SM2404NSAN-VB


30V 6.5A 30m@10V 1PCSNChannel SOT-23 MOSFETs ROHS
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VBsemi Elec 189
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AUD 0.0868
Multiples of: 5

                   
DMT6018LDR-7


MOSFET MOSFET BVDSS: 41V-60V
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Diodes Incorporated 168
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AUD 1.1352
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          V - DFN3030 - 8Cut TapeSi      
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First...19561957195819591960...

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