MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IPB014N04NF2S


TO-263-3 MOSFETs ROHS
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Infineon 194
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AUD 3.3059
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AUIRF2805


International Rectifier MOSFET AUTO 55V 1 N-CH HEXFET 4.7mOhms
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Infineon 194
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AUD 3.3815
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175 A55 V4.7 mOhmsN - Channel  - 55 C 330 WThrough HoleTO - 220 - 3TubeSi1 Channel20 V150 nCEnhancementAec - Q101 
CI60N120SM5(TOKMAS)


TO-247-3 SiC MOSFETs ROHS
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Tokmas 194
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AUD 4.0736
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DMTH10H2M5STLWQ-13


MOSFETs MOSFET BVDSS: 61V-100V PowerDI1012-8 T&R 1.5K
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Diodes Incorporated 194
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AUD 5.7147
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PSMN1R2-80ASEJ


MOSFETs PSMN1R2-80ASE/SOT8000A/CCPAK12
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Nexperia 194
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AUD 5.7671
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375 A80 V1.18 mOhmsN - Channel 3.6 V- 55 C+ 175 C935 WSMD/SMTCCPAK1212Reel , Cut TapeSi1 Channel- 20 V , + 20 V233 nCEnhancement  
TK31E60W,S1VX(S


Trans MOSFET N-CH 600V 30.8A 3-Pin(3+Tab) TO-220
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Toshiba 194
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AUD 5.0188
Multiples of: 200

   N    230 WThrough Hole      Enhancement  
TK39N60W5,S1VF(S


MOSFET N Trench 600V 38.8A 4.5V @ 1.9mA 74 mΩ @ 19.4A，10V TO-247 RoHS
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Toshiba 194
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AUD 7.2664
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STP18NM60ND


MOSFET N-CH 600V 0.25Ohm 13A FDMesh II
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STMicroelectronics 194
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AUD 7.4627
Multiples of: 1000

13 A650 V290 mOhmsN - Channel25 V4 V- 55 C+ 150 C130 WThrough HoleTO - 220 - 3TubeSi1 Channel25 V34 nC   
ALD114913SAL


MOSFET Dual EPAD(R) N-Ch
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Advanced Linear Devices 184
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AUD 4.7776
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12 mA10 V500 Ohmsn - channel 1.34 V0 C+ 70 C500 mW (1/2 w)smd/smtSOIC - 8Tubesi2 channel10.6 V depletion  
SIHP24N80AEF-GE3


MOSFETs TO220 800V 20A N-CH MOSFET
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Vishay 184
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AUD 4.8707
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