MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SPA15N60CFD


Infineon Technologies MOSFET N-Ch 600V 13.4A TO220FP CoolMOS CFD
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Infineon 215
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AUD 3.7786
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13.4 A600 V330 mOhmsN - Channel20 V - 55 C+ 150 C34 WThrough HoleTO - 220 - 3TubeSi1 Channel20 V Enhancement Coolmos
2N80G-TF3-T


TO-220F MOSFETs ROHS
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Unisonic 214
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AUD 0.3861
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STP6NK60Z


Transistor: N-MOSFET; unipolar; 600V; 3.8A; 110W; TO220-3
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STMicroelectronics 214
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AUD 1.2955
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   N Channel               
STP18NM60N


STMicroelectronics MOSFET N-channel 600 V 0.27 ohm 13A MDmesh
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STMicroelectronics 214
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AUD 2.8082
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13 A600 V260 mOhmsN - Channel25 V - 55 C+ 150 C110 WThrough HoleTO - 220 - 3TubeSi1 Channel25 V35 nC  Mdmesh
DMTH6002LPS-13


MOSFET MOSFETBVDSS: 41V-60V
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Diodes Incorporated 214
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AUD 3.995
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100 A60 V1.7 mOhmsN - Channel 1 V- 55 C+ 175 C167 WSmd/SmtPowerdi5060 - 8Cut TapeSi1 Channel20 V130.8 nCEnhancement  
AUIRF7799L2TR


MOSFET DirectFET 2 250V 35A 38mOhm Automotive
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Infineon 214
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AUD 6.7478
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STP4NK80ZFP


Transistor: N-MOSFET; unipolar; 800V; 1.89A; 25W; TO220FP
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STMicroelectronics 211
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AUD 1.5045
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            Supermesh      
P50F10SN-5600


MOSFET EETMOS series Power MOSFET Through Hole
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Shindengen 209
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AUD 1.9433
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            EETMOS3      
IXFA5N100P


MOSFET Polar Power MOSFET HiPerFET
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IXYS 194
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AUD 5.3194
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5 A1 kV2.8 Ohmsn - channel 6 V- 55 C+ 150 C250 Wsmd/smtTO - 263 - 3Tubesi 30 V33.4 nCenhancement hiperfet
IPT017N10NM5LF2ATMA1


MOSFETs TRENCH >=100V
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Infineon 36
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AUD 5.8284
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321 A100 V1.6 mOhmsN - Channel 3.9 V- 55 C+ 175 C375 WSMD/SMTPG - HSOF - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V165 nCEnhancement OptiMOS
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