MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Id - Continuous Drain Current
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Vds - Drain-Source Breakdown Voltage
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Rds On - Drain-Source Resistance
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Transistor Polarity
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Minimum Operating Temperature
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Maximum Operating Temperature
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IXTP8N70X2


MOSFET 700V/8A Ultra Junct X2-Class MOSFET
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IXYS 217
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AUD 4.2209
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8 A700 V500 mOhmsN - Channel 3 V- 55 C+ 150 C150 WThrough HoleTO - 220 - 3TubeSi1 Channel30 V12 nCEnhancement Hiperfet
VP2206N2


Transistor: P-MOSFET; unipolar; -60V; -4A; 360mW; TO39
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Microchip 217
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AUD 6.3525
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750 mA60 V900 mOhmsP - Channel 3.5 V- 55 C+ 150 C6 WThrough HoleTO - 39 - 3BulkSi1 Channel- 20 V , 20 V Enhancement  
IXFX420N10T


MOSFET TRENCH HIPERFET PWR MOSFET 100V 420A
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IXYS 217
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AUD 24.0358
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420 A100 V2.6 mOhmsN - Channel 5 V- 55 C+ 175 C1.67 kWThrough HoleTO - 247 - 3TubeSi 20 V670 nCEnhancement Hiperfet
WSP4409


MOSFET P Trench 30V 17.6A (Tc) 2.3V @ 250uA 7.2 mΩ @ 17.6A,10V SOP-8_150mil RoHS
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Winsok 216
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AUD 0.3444
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DMN3022LFG-13


MOSFET MOSFET BVDSS: 25V-30V
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Diodes Incorporated 216
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AUD 0.6091
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15 A30 V22 mOhms , 8 mOhmsN - Channel 1 v , 800 mV- 55 C+ 150 C1.96 WSmd/SmtPowerdi3333 - 8Cut TapeSi2 Channel10 V3.7 nC , 8 nCEnhancement  
IXFP10N60P


MOSFET HiPERFET Id10 BVdass600
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IXYS 216
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AUD 3.809
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10 A600 V740 mOhmsN - Channel  - 55 C+ 150 C200 WThrough HoleTO - 220 - 3TubeSi1 Channel30 V Enhancement Hiperfet
IPB120P04P4-04


Infineon Technologies MOSFET P-Ch -40V -120A D2PAK-2 OptiMOS-P2
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Infineon 216
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AUD 4.2487
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- 120 A- 40 V3.5 mOhmsP - Channel 2 V- 55 C+ 175 C136 WSmd/SmtD2PAK - 3ReelSi1 Channel20 V158 nCEnhancementAec - Q101Optimos
WMK053NV8HGS


Transistor: N-MOSFET; unipolar; TO220-3
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Wayon 215
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AUD 0.8922
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AP80N06H


60V 80A 6.1mΩ@20V,80A null TO-220 MOSFETs ROHS
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Quan Li 215
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AUD 1.1159
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GAN041-650WSBQ


MOSFET MOS DISCRETES
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Nexperia 207
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AUD 11.4925
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47.2 A650 V41 mOhmsN - Channel 4.5 V- 55 C+ 175 C187 WThrough HoleSOT - 429 - 3Cut Tape , ReelGaN1 Channel- 20 V , + 20 V22 nCEnhancement  
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