MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Rds On - Drain-Source Resistance
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
KIA2300


MOSFET N Trench 20V 6A 1V @ 250uA 30 mΩ @ 6A,10V SOT-23 (SOT-23-3) RoHS
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KIA 221
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AUD 0.0651
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IPW60R125CPFKSA1


Transistor: N-MOSFET; unipolar; 600V; 25A; 208W; PG-TO247-3
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Infineon 218
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AUD 5.4338
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            Coolmos Cp      
BTS282ZE3230AKSA2


IC: power switch; low-side switch; 36A; Channels:1; N-Channel; THT
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Infineon 218
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AUD 7.0662
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            Tempfet®1     
IXTP6N100D2


MOSFET N-CH MOSFETS (D2) 1000V 6A
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IXYS 218
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AUD 9.7194
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6 A1 kV2.2 OhmsN - Channel  - 55 C+ 150 C300 WThrough HoleTO - 220 - 3TubeSi1 Channel20 V95 nC   
STD35NF06LT4&15-VB


60V 50A null TO-252 MOSFETs ROHS
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VBsemi Elec 217
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AUD 0.6635
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AGM40P100H


40V 114A 135W 4.6m@10V,20A 1.6V@250uA 1PCSPChannel TO-263 MOSFETs ROHS
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AGM-Semi 217
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AUD 0.7012
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WML6N90D1


Transistor: N-MOSFET; WMOS™ D1; unipolar; 900V; 6A; Idm: 24A; 50W
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Wayon 217
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AUD 1.1576
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            WMOS D1      
TK18A30D,S5X


MOSFET PWR MOSFET PD=45W F=1MHZ
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Toshiba 217
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AUD 1.4981
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18 A300 V139 mOhmsN - Channel 1.5 V- 55 C+ 150 C45 WThrough HoleTO - 220SIS - 3TubeSi1 Channel10 V60 nCEnhancement Mosvii
IPW65R190C7XKSA1


Transistor: N-MOSFET; unipolar; 650V; 13A; 72W; PG-TO247-3
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Infineon 217
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AUD 2.9224
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   N Channel               
STW6N95K5


MOSFET N-Ch 950V 1 Ohm 9A Zener SuperMESH 5
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STMicroelectronics 208
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AUD 1.6655
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9 A950 V1.25 OhmsN - Channel  - 55 C+ 150 C90 WThrough HoleTO - 247TubeSi 30 V13 nC  Mdmesh
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