MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IXTP12N50P


MOSFET 12 Amps 500V 0.5 Ohm Rds
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

IXYS 265
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AUD 4.3463
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12 A500 V500 mOhmsN - Channel 5.5 V- 55 C+ 150 C200 WThrough HoleTO - 220 - 3TubeSi1 Channel30 V29 nCEnhancement Polar
IXTT6N120


MOSFET 6 Amps 1200V 2.700 Rds
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IXYS 265
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AUD 15.2851
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6 A1.2 kV2.6 Ohmsn - channel 5 V- 55 C+ 150 C300 Wsmd/smtTO - 268 - 3Tubesi1 channel20 V56 nCenhancement  
AP4501AGM-HF-VB


30V 8A 1PCSN-Channel&1PCSP-Channel SOP8 MOSFETs ROHS
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VBsemi Elec 264
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AUD 0.3456
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HSP6048


MOSFET N Channel 60V 150A 2.3V @ 250uA 3.6mΩ @ 20A,10V TO-220 RoHS
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HUASHUO 264
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AUD 0.573
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BSP135H6433XTMA1


Infineon Technologies MOSFET N-Ch 600V 20mA SOT-223-3
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Infineon 264
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AUD 0.9621
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20 mA600 V60 Ohmsn - channel 1.4 V- 55 C+ 150 C1.8 Wsmd/smtSOT - 223 - 4Reelsi1 channel20 V3.7 nCdepletion  
STW70N60M2


Transistor: N-MOSFET; unipolar; 650V; 43A; 450W; TO247
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STMicroelectronics 264
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AUD 4.4252
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68 A600 V30 mOhmsN - Channel 3 V- 55 C+ 150 C450 WThrough HoleTO - 247 - 3TubeSi1 Channel- 25 V , 25 V118 nCEnhancement MDmesh
IXFP110N15T2


MOSFET Trench T2 HiperFET Power MOSFET
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IXYS 264
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AUD 5.2209
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110 A150 V11 mOhmsN - Channel 4.5 V- 55 C+ 175 C480 WThrough HoleTO - 220 - 3TubeSi1 Channel20 V150 nCEnhancement Hiperfet
SSM6K403TU,LF(T


Transistor: N-MOSFET; unipolar; 20V; 4.2A; 0.5W; UF6
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Toshiba 262
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AUD 0.211
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SWT18N50D


500V 18A TO-247 MOSFETs ROHS
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Sam&wing 262
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AUD 1.1082
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IXFK44N80P


N-Channel 800 V 44A (Tc) 1040W (Tc) Through Hole TO-264AA (IXFK)
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IXYS 29
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AUD 23.5785
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44 A800 V190 mOhmsn - channel  - 55 C+ 150 C1200 Wthrough holeTO - 264 - 3Tubesi1 channel30 V enhancement hiperfet
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