MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
CSD16408Q5C


MOSFET DualCool N-Channel NexFET Power MOSFET
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Texas Instruments 266
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AUD 1.3654
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22 A25 V6.8 mOhmsN - Channel 1.8 V- 55 C+ 150 C3.1 WSmd/SmtVSON - CLIP - 8ReelSi1 Channel16 V6.7 nC  Nexfet
VN2460N3-G


Transistor: N-MOSFET; unipolar; 600V; 0.25A; 1W; TO92
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Microchip 266
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AUD 1.4328
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160 mA600 V20 OhmsN - Channel  - 55 C+ 150 C1 WThrough HoleTO - 92BulkSi1 Channel20 V Enhancement  
IXFQ72N30X3


MOSFET DiscMSFT NChUltrJnctn X3Class TO-3P (3)
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IXYS 266
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AUD 14.9612
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           Tube      Hiperfet
UT2955G-TN3-R-VB


60V 30A 61mΩ@10V P Channel TO-252 MOSFETs ROHS
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VBsemi Elec 265
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AUD 0.5386
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FMH09N90E


TO-3P MOSFETs ROHS
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Fuji 265
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AUD 1.5414
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SPA20N60CFD


Infineon Technologies MOSFET N-Ch 600V 20.7A TO220FP CoolMOS CFD
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Infineon 265
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AUD 3.4149
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20.7 A600 V220 mOhmsN - Channel20 V - 55 C+ 150 C35 WThrough HoleTO - 220 - 3TubeSi1 Channel20 V Enhancement Coolmos
CSD17309Q3


N-Channel 30 V 20A (Ta), 60A (Tc) 2.8W (Ta) Surface Mount 8-VSON-CLIP (3.3x3.3)
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Texas Instruments 257
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AUD 0.8376
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60 A30 V5.4 mOhmsN - Channel 1.2 V- 55 C+ 150 C2.8 WSmd/SmtSON - 8ReelSi1 Channel8 V7.5 nCEnhancement Nexfet
IRFP048PBF


N-Channel 60 V 70A (Tc) 190W (Tc) Through Hole TO-247AC
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Vishay 254
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AUD 3.4149
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   N - Channel  - 55 C+ 175 C Through HoleTO - 247ACTubeSi      
12N65


Transistor: N-MOSFET; unipolar; 650V; 12A; 33.2W; TO220F
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Luguang 238
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AUD 0.9215
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IRFS3004TRL7PP


Trans MOSFET N-CH 40V 400A 7-Pin(6+Tab) D2PAK T/R
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Infineon 1
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AUD 2.4701
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400 A40 V90 mOhmsN - Channel  - 55 C 380 WSmd/SmtD2PAKReelSi1 Channel20 V160 nCEnhancement  
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