MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IRFS7437TRL7PP


International Rectifier MOSFET 40V 195A 1.5mOhm 150nC StrongIRFET
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Infineon 9312
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AUD 1.9821
Multiples of: 800

295 A40 V1.4 mOhmsN - Channel 3.9 V- 55 C+ 175 C231 WSmd/SmtD2PAK - 7ReelSi1 Channel 225 nCEnhancement Strongirfet
IXFH10N80P


MOSFET 10 Amps 800V 1.1 Rds
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IXYS 271
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AUD 5.5
Multiples of: 1

10 A800 V1.1 Ohmsn - channel 5.5 V- 55 C+ 150 C300 Wthrough holeTO - 247 - 3Tubesi1 channel30 V40 nCenhancement hiperfet
IXFX52N100X


MOSFET 1000V 52A PLUS247 Power MOSFET
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IXYS 271
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AUD 44.7308
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52 A1000 V125 mOhmsN - Channel 3.5 V- 55 C+ 150 C1250 WThrough HolePLUS247 - 3TubeSi1 Channel30 V245 nCEnhancement Hiperfet
FQPF6N80T


MOSFET N-CH/800V/6A/QFET
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ON Semiconductor 270
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AUD 1.84
Multiples of: 1

3.3 A800 V1.95 OhmsN - Channel  - 55 C+ 150 C51 WThrough HoleTO - 220FTubeSi1 Channel30 V Enhancement Qfet
TPM6013PHK3-3


TO-252 MOSFETs ROHS
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TECH PUBLIC 269
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AUD 0.407
Multiples of: 1

                   
IRF7452TRPBF-VB


100V 1PCSNChannel SOP-8 MOSFETs ROHS
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VBsemi Elec 269
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AUD 0.5227
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STD10P10F6


MOSFET P-channel 100 V, 0.136 Ohm typ., 10 A STripFET F6 Power MOSFET in a DPAK package
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STMicroelectronics 269
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AUD 0.5435
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10 A100 V180 mOhmsP - Channel 2 V + 175 C40 WSmd/SmtDPAK - 3 -1 Channel+/- 20 V16.5 nCEnhancement  
DMP4015SSSQ-13


MOSFET P-Ch -40V 11mOhm 25Vgss 1.45W -10.1A
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Diodes Incorporated 269
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AUD 0.905
Multiples of: 1

10.1 A40 V15 mOhmsP - Channel 1.5 V- 55 C+ 150 C1.82 WSmd/SmtSO - 8Cut TapeSi1 Channel10 V47.5 nCEnhancementAec - Q101 
OSPF18N50H


500V 18A 250m 65W TO-220F MOSFETs ROHS
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OSEN 259
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AUD 0.5346
Multiples of: 1

                   
TSF20N60MR


MOSFET N Trench 600V 20A (Tc) 5V @ 250uA 400 mΩ @ 10A,10V TO-220F RoHS
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Truesemi 246
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AUD 1.5031
Multiples of: 1

                   
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