MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
BSZ040N06LS5ATMA1


60V 40A 69W 4mO@20A,10V N Channel TSDSON-8-FL MOSFETs ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon 4850
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AUD 0.9659
Multiples of: 5000

         Smd/SmtTSDSON - 8ReelSi      
VP2206N3-G


Transistor: P-MOSFET; unipolar; -60V; -4A; 740mW; TO92
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Microchip 363
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AUD 2.1828
Multiples of: 1

640 mA60 V900 mOhmsp - channel  - 55 C+ 150 C1 Wthrough holeTO - 92Bulksi1 channel20 V enhancement  
STW24N60DM2


Transistor: N-MOSFET; unipolar; 600V; 11A; 150W; TO247
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STMicroelectronics 363
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AUD 2.709
Multiples of: 1

            Mdmesh      
IPB100N10S3-05


Infineon Technologies MOSFET N-Ch 100V 100A D2PAK-2 OptiMOS-T
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Infineon 363
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AUD 4.2851
Multiples of: 1

100 A100 V4.8 mOhmsN - Channel  - 55 C+ 175 C300 WSmd/SmtD2PAK - 3ReelSi1 Channel20 V EnhancementAec - Q101Optimos
FDL100N50F


Transistor: N-MOSFET; unipolar; 500V; 100A; 2500W; TO264
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ON Semiconductor 363
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AUD 24.0485
Multiples of: 375

            Unifet      
Hot BSC036NE7NS3 G


Infineon Technologies MOSFET N-Ch 75V 100A TDSON-8
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Infineon 363
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AUD 1.0661
Multiples of: 1

100 A75 V3.6 mOhmsN - Channel 2.3 V- 55 C+ 150 C156 WSmd/SmtPG - TDSON - 8ReelSi1 Channel10 V63.4 nCEnhancement Optimos
IPD038N06N3 G


Infineon Technologies MOSFET N-Ch 60V 90A DPAK-2 OptiMOS 3
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Infineon 362
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AUD 1.1427
Multiples of: 1

90 A60 V3.8 mOhmsN - Channel  - 55 C+ 175 C188 WSmd/SmtDPAK - 3ReelSi1 Channel20 V Enhancement Optimos
SI7636DP-T1-E3


MOSFET 30V 28A 0.004Ohm
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Vishay 362
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AUD 2.2234
Multiples of: 1

28 A30 V4 mOhmsN - Channel 1 V- 55 C+ 150 C5.2 WSMD/SMTPOWERPAK - SO - 8Reel , Cut TapeSi1 Channel- 20 V , 20 V50 nCEnhancement TrenchFET
VN2224N3-G


Trans MOSFET N-CH Si 240V 0.54A 3-Pin TO-92 Bag
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Microchip 362
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AUD 3.4515
Multiples of: 1

540 mA240 V1.25 OhmsN - Channel  - 55 C+ 150 C1 WThrough HoleTO - 92BulkSi1 Channel20 V Enhancement  
IXFK64N50P


500V 64A 830W 85mO@10V,32A N Channel TO-264-3 MOSFETs ROHS
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IXYS 101
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AUD 17.5069
Multiples of: 1

64 A500 V85 mOhmsN - Channel  - 55 C+ 150 C830 WThrough HoleTO - 264 - 3TubeSi1 Channel30 V Enhancement Hiperfet
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