MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
WML10N80M3


Transistor: N-MOSFET; SJ-MOSFET M3; unipolar; 800V; 10A; 31W
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Wayon 370
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AUD 1.4418
Multiples of: 1

            Sj - Mosfet M3      
IPP80N04S4-03


Infineon Technologies MOSFET N-Ch 40V 80A TO220-3 OptiMOS-T2
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Infineon 368
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AUD 1.8224
Multiples of: 1

80 A40 V3.3 mOhmsn - channel     through holeTO - 220 - 3Tubesi1 channel   aec - q101optimos
IRFBE30SPBF


N-Channel 800 V 4.1A (Tc) 125W (Tc) Surface Mount D²PAK (TO-263)
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Vishay 368
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AUD 2.4448
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         Smd/SmtTO - 263 - 3TubeSi      
IRFB3256PBF


Transistor: N-MOSFET; unipolar; 60V; 75A; 300W; TO220AB
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Infineon 368
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AUD 2.6819
Multiples of: 1

210 A60 V3.4 mOhmsN - Channel4 V20 V  300 WThrough HoleTO - 220AB - 3TubeSi1 Channel4 V130 nCEnhancement  
IXTA26P20P-TRL


MOSFET IXTA26P20P TRL
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IXYS 368
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AUD 6.9038
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           Cut Tape       
IXTQ26P20P


MOSFET -26.0 Amps -200V 0.170 Rds
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IXYS 368
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AUD 7.7
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26 A200 V170 mOhmsP - Channel  - 55 C+ 175 C300 WThrough HoleTO - 3P - 3TubeSi1 Channel20 V Enhancement  
ZVN3310A


N-Channel 100 V 200mA (Ta) 625mW (Ta) Through Hole TO-92
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Diodes Incorporated 367
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AUD 0.9871
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500 mA100 V10 OhmsN - channel 800 mV- 55 C+ 150 C625 mWThrough_HoleTO - 92BulkSi1 Channel10 V Enhancement  
SPP20N60S5XKSA1


MOSFET HIGH POWER_LEGACY
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Infineon 367
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AUD 1.6659
Multiples of: 379

           Tube      Coolmos
STB40N60M2


Transistor: N-MOSFET; unipolar; 600V; 22A; 250W; D2PAK
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STMicroelectronics 367
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AUD 4.3198
Multiples of: 1

            Supermesh      
MS8N100FE


1kV 8A 1.8@10V,4A 31.7W 5V@250A 1 N-Channel TO-263 MOSFETs ROHS
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MASPOWER 366
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AUD 1.6264
Multiples of: 1

                   
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