MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
STP3LN80K5


MOSFET POWER MOSFET
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STMicroelectronics 371
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AUD 0.8439
Multiples of: 1

2 A800 V2.75 Ohmsn - channel 3 V- 55 C+ 150 C45 Wthrough holeTO - 220 - 3Tubesi1 channel30 V2.63 nCenhancement  
IPB017N10N5LFATMA1


MOSFET DIFFERENTIATED MOSFETS
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Infineon 370
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AUD 7.3037
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180 A100 V1.5 mOhmsN - Channel 2.2 V- 55 C+ 175 C375 WSmd/SmtTO - 263 - 7Cut TapeSi1 Channel20 V210 nCEnhancement Optimos
DMC3400SDW-7


MOSFET 30V Comp Pair Enh 20Vgs 55pF 0.6nC
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Diodes Incorporated 370
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AUD 0.0857
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650 mA , 450 mA30 V200 mOhms , 360 mOhmsN - Channel, P - Channel 800 mV , 2.6 V- 55 C+ 150 C310 mWSmd/SmtSOT - 363 - 6Cut TapeSi2 Channel20 V1.4 nC , 1.3 nCEnhancement  
WMT04N15TS


Transistor: N-MOSFET; unipolar; SOT223
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Wayon 370
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AUD 0.4075
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FQD30N06


60V 35A 25mO@10V,35A N Channel TO-252 MOSFETs ROHS
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VBsemi Elec 370
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AUD 0.5194
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SVT044R5NT


TO-220 MOSFETs ROHS
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Silan 370
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AUD 0.8193
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IRF840STRRPBF


MOSFET N-Chan 500V 8.0 Amp
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Vishay 370
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AUD 2.0522
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   n - channel  - 55 C+ 150 C smd/smtD2PAK - 2Reelsi      
R6030KNX


MOSFET Nch 600V 30A Si MOSFET
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ROHM 370
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AUD 3.3415
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30 A600 V115 mOhmsN - Channel 3 V- 55 C+ 150 C86 WThrough HoleTO - 220FP - 3BulkSi1 Channel20 V56 nCEnhancement  
IPD90N03S4L-03-HXY


30V 150A 2mΩ 1PCSNChannel TO-252-2L MOSFETs ROHS
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HXY MOS 369
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AUD 0.3534
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ISG0613N04NM6HATMA1


MOSFETs N
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Infineon 369
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AUD 2.9224
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299 A40 V880 uOhmsN - Channel 2.8 V- 55 C+ 175 C167 WSMD/SMTTFN - 10Reel , Cut TapeSi2 Channel- 20 V , + 20 V69 nCEnhancement  
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