MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
AO4812-MS


30V 6A 25mΩ@10V,6A 2W 1.8V@250uA 35pF@35V 2 N-Channel 255pF@15V 2.55nC@10V -55℃~+150℃@(Tj) SOP-8 MOSFETs ROHS
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MSKSEMI 378
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AUD 0.1277
Multiples of: 5

                   
MTN2306AN3-VB


30V 6.5A N Channel SOT-23 MOSFETs ROHS
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VBsemi Elec 368
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AUD 0.0973
Multiples of: 5

                   
WSD3030DN


MOSFET N Trench 30V 34A (Tc) 2.5V @ 250uA 12 mΩ @ 20A,10V DFN3x3-8-8 RoHS
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Winsok 368
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AUD 0.1705
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TM100N03AD


30V 100A 6.5m TO-252-3L MOSFETs ROHS
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Tritech-MOS 368
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AUD 0.1731
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WMR05P04TS


Transistor: P-MOSFET; unipolar; DFN2020-6
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Wayon 368
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AUD 0.2278
Multiples of: 1

                   
12P10L-TN3-R


MOSFET P Trench 100V 9.4A 4V @ 250uA 290 mΩ @ 4.7A,10V TO-252-2 (DPAK) RoHS
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Unisonic 368
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AUD 0.3028
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AGM614MNA


60V 40A 13m@10V,10A 20.8W 1.6V@250uA 2 N-Channel DFN5x6 MOSFETs ROHS
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AGM-Semi 368
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AUD 0.3423
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AP120N04K


40V 120A 2.6mΩ@20V,120A null TO-252 MOSFETs ROHS
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Quan Li 368
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AUD 0.62
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DMG7N65SCT


MOSFET MOSFET BVDSS: 501V-650V
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Diodes Incorporated 368
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AUD 0.8784
Multiples of: 1

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SSM6N58NU,LF


Mosfet Array 2 N-Channel (Dual) 30V 4A 1W Surface Mount 6-UDFN (2x2)
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Toshiba 155
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AUD 0.2412
Multiples of: 5

4 A30 V112 mOhmsN - Channel 1 V  1 WSmd/SmtUDFN - 6ReelSi2 Channel     
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