MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Rds On - Drain-Source Resistance
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
HSBA3048


30V 100A 1.3mΩ@10V,20A 63W 1.6V@250uA 196pF@15V N Channel 3.432nF@15V 45nC@10V -55℃~+150℃@(Tj) PRPAK5x6 MOSFETs ROHS
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HUASHUO 402
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AUD 0.725
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IRFI620GPBF


MOSFET N-Chan 200V 4.1 Amp
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Vishay 396
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AUD 1.0183
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   N - Channel  - 55 C+ 150 C Through HoleTO - 220 - 3 FPTubeSi      
AUIRLR120NTRL


MOSFET AUTO 100V 1 N-CH HEXFET 185mOhms
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Infineon 396
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AUD 1.7207
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10 A100 V185 mOhmsN - Channel  - 55 C 48 WSmd/SmtTO - 252 - 3ReelSi1 Channel16 V13.3 nCEnhancementAec - Q101 
NCE65TF099


650V 38A 89mΩ@10V,19A 322W 3.5V@250uA N Channel TO-220 MOSFETs ROHS
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NCE Power 396
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AUD 3.2587
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STD3NK80ZT4


Transistor: N-MOSFET; unipolar; 800V; 1.57A; 70W; DPAK
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STMicroelectronics 383
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AUD 0.7868
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            Supermesh      
FCH110N65F_F155


MOSFET SuperFET2 650V, 110 mOhm, FRFET
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ON Semiconductor 374
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AUD 8.069
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35 A650 V110 mOhmsn - channel20 v , 30 V5 V- 55 C+ 150 C357 Wthrough holeTO - 247 - 3Tubesi1 channel20 v , 30 V98 nCenhancement  
SI7463ADP-T1-GE3


Vishay Semiconductors MOSFET -40V -46A 39W
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Vishay 258
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AUD 1.4084
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46 A40 V10 mOhmsP - Channel 1.2 V- 55 C+ 150 C39 WSmd/SmtPOWERPAK - SO - 8ReelSi1 Channel10 V96 nCEnhancement Trenchfet
WSF90P03


MOSFET P Trench 30V 85A (Tc) 2.5V @ 250uA 6 mΩ @ 30A,10V TO-252-2 (DPAK) RoHS
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Winsok 251
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AUD 0.5749
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SFT1452-TL-W


MOSFET NCH 250V 3A TP-FA(DPAK)
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ON Semiconductor 0
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AUD 0.4334
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   N - Channel     Smd/SmtTO - 252 - 3ReelSi1 Channel     
SI2328DS-T1-E3


MOSFET 100V Vds 20V Vgs SOT-23
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Vishay 0
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AUD 0.3849
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   N - Channel  - 55 C+ 150 C Smd/SmtTO - 236 - 3Reel       
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