MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

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Id - Continuous Drain Current
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Vds - Drain-Source Breakdown Voltage
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Rds On - Drain-Source Resistance
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Qg - Gate Charge
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Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
ZVP2106ASTZ


P-Channel 60 V 280mA (Ta) 700mW (Ta) Through Hole E-Line (TO-92 compatible)
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Diodes Incorporated 1940
Ships to you
between Mon. 03 Aug to Fri. 07 Aug
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AUD 0.7034

Multiples of: 2000

- 280 mA- 60 V5 OhmsP - channel20 V - 55 C+ 150 C700 mWThrough_HoleTO - 92 - 3BulkSi1 Channel20 V Enhancement  
MSK20P80GNF


18V 80A 41.67W 2.3mΩ@4.5V,20A 600mV@250uA 730pF@15V P Channel 12000pF@15V 149nC@4.5V -55℃~+150℃@(Tj) DFN5x6-8L MOSFETs ROHS
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MSKSEMI 390
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between Mon. 17 Aug to Thu. 20 Aug
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AUD 0.6349

Multiples of: 1

                   
AUIRF9Z34N


Transistor: P-MOSFET; unipolar; -55V; -19A; 68W; TO220AB
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Infineon 390
Ships to you
between Fri. 07 Aug to Tue. 11 Aug
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AUD 1.2346

Multiples of: 1

            Hexfet®      
WGF65R099G


TO-220F MOSFETs ROHS
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Wild Goose 390
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between Mon. 17 Aug to Thu. 20 Aug
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AUD 2.1971

Multiples of: 1

                   
TDM3452


MOSFET N Trench 30V 80A 2.4V @ 250uA 3.1 mΩ @ 20A,10V DFN-8_5x6mm RoHS
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Techcode 389
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between Mon. 17 Aug to Thu. 20 Aug
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AUD 0.5982

Multiples of: 1

                   
ZXMC3F31DN8TA


MOSFET 30V S08 Dual MOSFET 20V VBR 4.5V Gate
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Diodes Incorporated 389
Ships to you
between Mon. 03 Aug to Fri. 07 Aug
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AUD 0.6707

Multiples of: 1

7.3 A , 5.3 A30 V24 mOhms , 80 mOhmsN - Channel, P - Channel 1 v , 3 V- 55 C+ 150 C1.25 WSmd/SmtSO - 8Cut TapeSi2 Channel20 V12.9 nC , 12.7 nCEnhancement  
TK22E10N1,S1X(S


Transistor: N-MOSFET; unipolar; 100V; 22A; 72W; TO220AB
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Toshiba 381
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between Mon. 03 Aug to Fri. 07 Aug
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AUD 1.2391

Multiples of: 1

                   
BUK78150-55A/CUF


MOSFETs BUK78150-55A/SOT223/SC-73
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Nexperia 370
Ships to you
between Mon. 03 Aug to Fri. 07 Aug
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AUD 0.4059

Multiples of: 1

                   
BSZ031NE2LS5ATMA1


25V 3.1mO@20A,10V N Channel TSDSON-8-FL MOSFETs ROHS
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Infineon 369
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between Fri. 07 Aug to Tue. 11 Aug
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AUD 0.573

Multiples of: 1

           Cut Tape       
Hot NTLJD3119CTBG


ON Semiconductor MOSFET COMP 2X2 20V 3.8A 100mOhm
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ON Semiconductor 235
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between Mon. 17 Aug to Thu. 20 Aug
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AUD 0.3975

Multiples of: 1

3.8 A21 v , - 20 V100 mOhmsN - Channel, P - Channel8 V - 55 C+ 150 C710 mWSmd/SmtWDFN - 6ReelSi2 Channel8 V Enhancement  
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