MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
STP220N6F7


MOSFET LGS LV MOSFET
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

STMicroelectronics 2328
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AUD 2.6306
Multiples of: 50

120 A60 V2.4 mOhmsN - Channel 4 V- 55 C+ 175 C237 WThrough HoleTO - 220 - 3TubeSi1 Channel+/- 20 V100 nCEnhancement Stripfet
IRFI9530GPBF


P-Channel 100 V 7.7A (Tc) 42W (Tc) Through Hole TO-220-3
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Vishay 970
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AUD 1.4646
Multiples of: 1

         Through HoleTO - 220 - 3TubeSi      
IPP076N12N3GXKSA1


Transistor: N-MOSFET; unipolar; 120V; 100A; 188W; PG-TO220-3
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Infineon 485
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AUD 2.0896
Multiples of: 500

            Optimos 3      
STU8N80K5


STMicroelectronics MOSFET N-Ch 800 V 0.76 Ohm 6 A Zener-protected
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STMicroelectronics 388
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AUD 1.5581
Multiples of: 1

6 A800 V950 mOhmsn - channel 4 V- 55 C+ 150 C110 Wthrough holeIPAK - 3Tubesi1 channel30 V16.5 nCenhancement supermesh
IRF730SPBF


MOSFET N-Chan 400V 5.5 Amp
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Vishay 388
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AUD 1.5848
Multiples of: 400

         Smd/SmtTO - 263 - 3TubeSi      
IXTP1N100P


MOSFET 1 Amps 1000V 14 Rds
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IXYS 388
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AUD 2.397
Multiples of: 1

1.2 A1 kV13 Ohmsn - channel  - 55 C+ 150 C50 Wthrough holeTO - 220 - 3Tubesi1 channel20 V enhancement  
IPA60R165CP


N-Channel 600 V 21A (Tc) 34W (Tc) Through Hole PG-TO220 Full Pack
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Infineon 388
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AUD 4.6913
Multiples of: 1

21 A650 V165 mOhmsN - Channel  - 55 C+ 150 C34 WThrough HoleTO - 220 - 3 FPTubeSi1 Channel20 V9 nCEnhancement Coolmos
FDI038AN06A0


Fairchild Semiconductor MOSFET 60V 80a 0.0038 OhmsVGS=10V
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ON Semiconductor 388
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AUD 4.7575
Multiples of: 1

80 A60 V3.5 mOhmsn - channel  - 55 C+ 175 C310 Wthrough holeI2PAK - 3Tubesi1 channel20 V enhancement powertrench
FCH170N60


MOSFET SuperFET2 600V, 170mohm
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ON Semiconductor 388
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AUD 4.8104
Multiples of: 1

22 A600 V170 mOhmsN - Channel20 v , 30 V3.5 V- 55 C+ 150 C227 WThrough HoleTO - 247 - 3TubeSi1 Channel20 v , 30 V42 nCEnhancement Superfet Ii
IRFP4668PBF


MOSFET N Trench 200V 130A 5V @ 250uA 9.7 mΩ @ 81A,10V TO-247 (AC) RoHS
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Infineon 5
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AUD 2.3613
Multiples of: 1

   N - Channel  - 55 C+ 175 C Through HoleTO - 247ACTube       
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