MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IPI076N12N3GAKSA1


Transistor: N-MOSFET; unipolar; 120V; 100A; 168W; PG-TO262-3
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Infineon 15520
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AUD 2.4694
Multiples of: 500

            Optimos 3      
IRFH5015TRPBF


Transistor: N-MOSFET; unipolar; 150V; 10A; 250W; PQFN5X6
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Infineon 3829
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AUD 1.1216
Multiples of: 1

10 A150 V31 mOhmsN - Channel 5 V- 55 C+ 150 C3.6 WSmd/SmtPQFN - 8ReelSi1 Channel20 V36 nCEnhancement  
AOD603A-MS


TO-252-4L MOSFETs ROHS
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MSKSEMI 397
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AUD 0.2609
Multiples of: 5

                   
NPS18N50F


TO-220F MOSFETs ROHS
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NH 397
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AUD 0.4239
Multiples of: 1

                   
IRF530STRLPBF


MOSFET N-Chan 100V 14 Amp
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Vishay 397
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AUD 1.3084
Multiples of: 1

   N - Channel  - 55 C+ 175 C Smd/SmtD2PAKReelSi      
IXTP02N120P


MOSFET 500V to 1200V Polar Power MOSFET
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IXYS 397
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AUD 2.2821
Multiples of: 1

200 mA1.2 kV60 Ohmsn - channel 4 V- 55 C+ 150 C33 Wthrough holeTO - 220 - 3Tubesi1 channel20 V4.7 nCenhancement  
R6530ENZ4C13


MOSFET 650V 30A TO-247, Low-noise Power MOSFET
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ROHM 397
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AUD 5.0567
Multiples of: 1

30 A650 V140 mOhmsN - Channel 4 V- 55 C+ 150 C305 WThrough HoleTO - 247G - 3TubeSi1 Channel- 20 V , + 20 V90 nCEnhancement  
DMF7N65


ITO-220AB-3 MOSFETs ROHS
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DIYI 396
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AUD 0.2267
Multiples of: 1

                   
150N03NF


30V 150A 1.5m@10V,30A 87W 2.4V@250uA 1PCSNChannel PDFN-8(5x6) MOSFETs ROHS
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GOODWORK 396
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AUD 0.4878
Multiples of: 1

                   
XP161A1265PR


MOSFET
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Torex Semiconductor 378
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AUD 0.5414
Multiples of: 5

                   
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