MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IRF9Z34PBF


P-Channel 60 V 18A (Tc) 88W (Tc) Through Hole TO-220AB
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Vishay 990
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AUD 1.0866
Multiples of: 1

18 A60 V140 mOhmsP - Channel 2 V- 55 C+ 175 C88 WThrough HoleTO - 220 - 3TubeSi1 Channel- 10 V34 nCEnhancement  
IRFB4019PBFXKMA1


MOSFETs TRENCH >=100V
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Infineon 456
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AUD 1.0048
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17 A150 V95 mOhmsN - Channel 4.9 V- 55 C+ 175 C80 WThrough HoleTO - 220AB - 3TubeSi1 Channel- 20 V , + 20 V13 nCEnhancement  
FQP8N60C


N-Channel 600 V 7.5A (Tc) 147W (Tc) Through Hole TO-220-3
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ON Semiconductor 456
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AUD 2.003
Multiples of: 1

   N Channel      TO - 220 - 3Tube       
SPA15N60CFDXKSA1


MOSFET LOW POWER_LEGACY
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Infineon 456
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AUD 2.8672
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           Tube      Coolmos
PMF170XP-HXY


20V 1.8A 120m 1PCSPChannel SOT-323 MOSFETs ROHS
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HXY MOS 455
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AUD 0.0471
Multiples of: 10

                   
PJM2312NSC


20V 5A 28m@4.5V,4.5A 1.25W 1V@250uA 1 N-Channel SOT-23-3 MOSFETs ROHS
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Pingjingsemi 455
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AUD 0.0526
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DMN2053UW-HXY


20V 2A 49m 1PCSNChannel SOT-323 MOSFETs ROHS
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HXY MOS 455
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AUD 0.0665
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WST3424


MOSFET N Trench 20V 4.4A 1.2V @ 250uA 65 mΩ @ 1.8A,4.5V SOT-23 (SOT-23-3) RoHS
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Winsok 412
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AUD 0.0675
Multiples of: 5

                   
DMNH6022SSDQ-13


MOSFET MOSFET BVDSS: 41V-60V
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Diodes Incorporated 0
6 to 16 Weeks Calender.png

AUD 1.0052
Multiples of: 2500

           Cut TapeSi    Aec - Q101 
FCPF600N65S3R0L-F154


MOSFET SUPERFET3 650V TO220F PKG
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ON Semiconductor 0
6 to 16 Weeks Calender.png

AUD 2.1765
Multiples of: 1000

6 A650 V600 mOhmsN - Channel 4.5 V- 55 C+ 150 C24 WThrough Hole  Si1 Channel- 30 V , + 30 V11 nCEnhancement  
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