MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
DMC4029SK4-13


MOSFET MOSFET BVDSS: 31V-40V
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Diodes Incorporated 471
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AUD 0.3782
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8.3 A , 6.1 A40 V15 mOhms , 33 mOhmsN - Channel, P - Channel 1 v , 3 V- 55 C+ 150 C2.9 WSmd/SmtTO - 252 - 4Cut TapeSi2 Channel20 V19.1 nC , 21.5 nCEnhancement  
NCE70T900I


700V 5A 820mO@10V,2.5A 46W N Channel TO-251 MOSFETs ROHS
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NCE Power 459
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AUD 0.4177
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IPZ40N04S5L7R4ATMA1


MOSFET N-CHANNEL_30/40V
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Infineon 459
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AUD 0.5418
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   N - Channel     Smd/SmtTSDSON - 8Cut TapeSi1 Channel   Aec - Q101 
STF20NF20


Transistor: N-MOSFET; unipolar; 200V; 11A; 30W; TO220FP
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STMicroelectronics 459
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AUD 1.2688
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            Mdmesh      
CDMSJ2204.7-650 SL


MOSFETs 4.7A,650V Through-Hole MOSFET N-Channel Super Junction T/L
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Central Semiconductor 459
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AUD 1.3315
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4.7 A650 V990 mOhmsN - Channel 4 V- 55 C+ 150 C22.5 WThrough HoleTO - 220FP - 3TubeSi1 Channel- 30 V , + 30 V9.7 nCEnhancement  
SP20MF65TF


TO-247 MOSFETs ROHS
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Siliup 459
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AUD 1.351
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SIRA62DP-T1-RE3


MOSFET 30V Vds 16V Vgs PowerPAK SO-8
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Vishay 457
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AUD 0.7993
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80 A30 V1.2 mOhmsN - Channel 1 V- 55 C+ 150 C65.7 WSmd/SmtPOWERPAK - SO - 8Cut TapeSi1 Channel10 V61.5 nCEnhancement Trenchfet, Powerpak
FDC6312P


MOSFET SSOT-6 P-CH DUAL
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ON Semiconductor 454
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AUD 0.4157
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2.3 A20 V115 mOhmsP - Channel  - 55 C+ 150 C960 mWSmd/SmtSSOT - 6ReelSi2 Channel8 V Enhancement Powertrench
IRF9Z34PBF-BE3


P-Channel 60V 18A (Tc) 88W (Tc) Through Hole TO-220AB
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Vishay 454
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AUD 1.1115
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18 A60 V140 mOhmsP - Channel 4 V- 55 C+ 175 C88 WThrough HoleTO - 220AB - 3TubeSi1 Channel- 20 V , + 20 V34 nCEnhancement  
FQT5P10TF


100V 3A 200mO@10V,3A P Channel SOT-223-4 MOSFETs ROHS
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VBsemi Elec 425
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AUD 0.5321
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