MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

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Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
AG540EGS4FRATCB


MOSFETs MOSFETs, Pch -40V -120A, HPLF5060T5LSAH, Power MOSFET for Automotive
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ROHM 3325
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between Thu. 06 Aug to Mon. 10 Aug
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AUD 1.9209

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120 A40 V4.6 mOhmsP - Channel 2.5 V- 55 C+ 175 C150 WSMD/SMTHPLF - 5Reel , Cut TapeSi1 Channel- 20 V , 5 V130 nCEnhancementAEC - Q101 
STF24N60DM2


Transistor: N-MOSFET; unipolar; 600V; 11A; 30W; TO220FP
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STMicroelectronics 463
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between Fri. 14 Aug to Wed. 19 Aug
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AUD 1.356

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            Mdmesh      
FCP25N60N_F102


Fairchild Semiconductor MOSFET 600V N-CHAN SupreMOS
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ON Semiconductor 463
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between Thu. 06 Aug to Mon. 10 Aug
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AUD 5.2692

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25 A600 V107 mOhmsN - Channel    216 WThrough HoleTO - 220 - 3TubeSi1 Channel     
IPB081N06L3 G


MOSFET OptiMOS 3 PWR TRANST 60V 50A
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Infineon 462
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between Thu. 06 Aug to Mon. 10 Aug
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AUD 0.9982

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50 A60 V6.7 mOhmsN - Channel 1.2 V- 55 C+ 175 C79 WSmd/SmtTO - 263ReelSi1 Channel20 V29 nCEnhancement Optimos
IRFBC40SPBF


Vishay Semiconductors MOSFET N-Chan 600V 6.2 Amp
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Vishay 462
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between Thu. 06 Aug to Mon. 10 Aug
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AUD 3.5463

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6.2 A600 V1.2 OhmsN - Channel  - 55 C+ 150 C3.1 WSmd/SmtD2PAK - 3TubeSi1 Channel20 V Enhancement  
IPP65R115CFD7AAKSA1


MOSFET AUTOMOTIVE
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Infineon 461
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between Thu. 06 Aug to Mon. 10 Aug
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AUD 5.9615

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21 A650 V115 mOhmsN - Channel 4.5 V- 40 C+ 150 C114 WThrough Hole Coolmos , TubeSi1 Channel- 20 V , + 20 V41 nCEnhancementAEC - Q101CoolMOS
TPM6321S6


SOT-23-6 MOSFETs ROHS
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TECH PUBLIC 460
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between Fri. 14 Aug to Wed. 19 Aug
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AUD 0.1251

Multiples of: 5

                   
SM2309PSAC-TRG-VB


30V 1PCSPChannel SOT-23 MOSFETs ROHS
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VBsemi Elec 451
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between Fri. 14 Aug to Wed. 19 Aug
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AUD 0.0969

Multiples of: 5

                   
NCEP02T10D


200V 100A 10mΩ@10V,50A 300W 4.5V@250uA N Channel TO-263-2 MOSFETs ROHS
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NCE Power 413
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between Fri. 14 Aug to Wed. 19 Aug
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AUD 2.6664

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NCEP02580


TO-220 MOSFETs ROHS
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NCE Power 129
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between Fri. 14 Aug to Wed. 19 Aug
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AUD 2.5219

Multiples of: 1

                   
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