MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IPD50R280CEAUMA1


500V 18.1A 280mO@13V,4.2A 119W N Channel TO-252 MOSFETs ROHS
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Infineon 12583
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AUD 0.8685
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 500 V       Smd/SmtTO - 252 - 3Cut TapeSi     Coolmos
WSD80120DN56


DFN-8(4.9x5.8) MOSFETs ROHS
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Winsok 535
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AUD 1.2791
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IXFP22N60P3


MOSFET 600V 22A 0.36Ohm PolarP3 Power MOSFET
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IXYS 465
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AUD 5.1552
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22 A600 V360 mOhmsN - Channel 5 V  500 WThrough HoleTO - 220 - 3TubeSi1 Channel30 V38 nC  Hiperfet
IXFH32N100X


MOSFET 1000V 32A TO-247 Power MOSFET
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IXYS 465
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AUD 27.2381
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32 A1000 V220 mOhmsN - Channel 3.5 V- 55 C+ 150 C890 WThrough HoleTO - 247 - 3TubeSi1 Channel30 V130 nCEnhancement Hiperfet
IRF820ASPBF


MOSFET N-Chan 500V 2.5 Amp
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Vishay 464
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AUD 1.077
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   N - Channel  - 55 C+ 150 C Smd/SmtD2PAKTubeSi      
ZXMN2A04DN8TA


MOSFET Dl 20V N-Chnl UMOS
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Diodes Incorporated 464
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AUD 1.7239
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7.7 A20 V35 mOhmsN - Channel  - 55 C+ 150 C2.1 WSmd/SmtSOIC - 8ReelSi2 Channel12 V Enhancement  
WMS15P02T1


Transistor: P-MOSFET; unipolar; SOP8
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Wayon 463
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AUD 0.2737
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WMB50P03TS


Transistor: P-MOSFET; unipolar; PDFN5060-8
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Wayon 463
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AUD 0.3803
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BSC034N06NS


MOSFET TRENCH 40<-<100V
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Infineon 443
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AUD 1.1493
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100 A60 V3.4 mOhmsN - Channel 2.1 V- 55 C+ 150 C74 WSmd/SmtPG - TDSON - 8Cut TapeSi1 Channel10 V33 nCEnhancement Optimos
WMK6N90D1B


Transistor: N-MOSFET; unipolar; 900V; 6A; TO220-3
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Wayon 420
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AUD 0.5997
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