MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
DP8810


TSSOP-8 MOSFETs ROHS
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Developer Microelectronics 659
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AUD 0.1036
Multiples of: 5

                   
AUIRF7103QTR


International Rectifier MOSFET AUTO 50V 1 N-CH HEXFET 130mOhms
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Infineon 659
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AUD 1.1882
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3 A50 V200 mOhmsN - Channel 3 V- 55 C+ 175 C2.4 WSmd/SmtSO - 8ReelSi2 Channel20 V10 nCEnhancementAec - Q101 
SIHA15N60E-E3


MOSFET 650V .28ohm@10V MOSFET
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Vishay 659
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AUD 2.2
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15 A650 V280 mOhmsN - Channel20 V4 V- 55 C+ 150 C34 WThrough HoleTO - 220 - 3TubeSi1 Channel30 V76 nCEnhancement  
HUF75345P3


Transistor: N-MOSFET; unipolar; 55V; 75A; 325W; TO220AB
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ON Semiconductor 659
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AUD 2.2701
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            Ultrafet®      
IPB018N06NF2S


TO-263-3 MOSFETs ROHS
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Infineon 659
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AUD 2.5326
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FDB045AN08A0_F085


Fairchild Semiconductor MOSFET 75V N-CHAN PwrTrench
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ON Semiconductor 659
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AUD 4.1278
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90 A75 V3.9 mOhmsn - channel  - 55 C+ 175 C310 Wsmd/smtD2PAK - 3Reelsi1 channel     
SI7174DP-T1-GE3


MOSFET 75V 60A 104W 7.0mohm @ 10V
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Vishay 659
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AUD 4.2521
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   N - Channel  - 55 C+ 150 C Smd/SmtPOWERPAK SO - 8ReelSi     Trenchfet
STP4441


60V 10A 2.8W 1PCSPChannel SOP-8 MOSFETs ROHS
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STANSON Tech 654
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AUD 0.1215
Multiples of: 5

                   
VBI2338


MOSFET P Trench 30V 7.6A 2.5V @ 250uA 56 mΩ @ 5.6A,4.5V SOT-89-3 RoHS
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VBsemi Elec 552
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AUD 0.2815
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IPA60R280P7XKSA1


MOSFET LOW POWER_NEW
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Infineon 174
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AUD 1.3381
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12 A600 V214 mOhmsN - Channel 3 V- 55 C+ 150 C24 WThrough HoleTO - 220FP - 3TubeSi1 Channel20 V18 nCEnhancement Coolmos
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