MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
Hot IPP020N08N5AKSA1


Transistor: N-MOSFET; unipolar; 80V; 120A; 375W; PG-TO220-3
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Infineon 653
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AUD 4.1209
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            Optimos 5      
RAL025P01TCR


MOSFET 1.5V Drive Pch MOSFET
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ROHM 652
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AUD 0.2197
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2.5 A12 V44 mOhmsP - Channel 1 V-+ 150 C1 WSmd/SmtSOT - 363T - 6Cut TapeSi1 Channel- 8 V16 nCEnhancement  
ZVN4210ASTZ


Diodes Incorporated MOSFET N-Chnl 100V
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Diodes Incorporated 652
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AUD 0.5549
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450 mA100 V1.8 OhmsN - Channel20 V - 55 C+ 150 C700 mWThrough HoleTO - 92 - 3BulkSi1 Channel20 V Enhancement  
IRFR5505TRPBF-VB


60V 25A 46mΩ@10V P Channel TO-252 MOSFETs ROHS
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VBsemi Elec 652
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AUD 0.6021
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BXP7N65P


Transistor: N-MOSFET; unipolar; 650V; 3.9A; Idm: 28A; 167W; TO220
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Bridgelux 652
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AUD 0.7167
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AOB414


Transistor: N-MOSFET; unipolar; 100V; 36A; 75W; TO263
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Alpha & Omega 652
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AUD 1.3582
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IXTK200N10P


MOSFET 200 Amps 100V 0.0075 Rds
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IXYS 652
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AUD 18.2239
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200 A100 V7.5 mOhmsn - channel 5 V- 55 C+ 175 C800 Wthrough holeTO - 264 - 3Tubesi1 channel20 V240 nCenhancement polarht
DMG4468LK3-13


MOSFET ENHANCE MODE MOSFET N Chan 30V/6.3-9.7A
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Diodes Incorporated 651
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AUD 0.3481
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   N - Channel  - 55 C+ 150 C Smd/SmtTO - 252 - 3Reel       
IRFP250PBF


N-Channel 200 V 30A (Tc) 190W (Tc) Through Hole TO-247AC
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Vishay 651
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AUD 1.944
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30 A200 V85 mOhmsN - Channel 2 V- 55 C+ 150 C190 WThrough HoleTO - 247AC - 3TubeSi1 Channel10 V140 nCEnhancement  
STP17N80K5


MOSFET PTD HIGH VOLTAGE
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STMicroelectronics 651
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AUD 3.6284
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