MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Rds On - Drain-Source Resistance
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IPB018N03LF2SATMA1


MOSFETs StrongIRFET 2 Power -Transistor, 30 V in DPAK
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Infineon 714
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AUD 1.6418
Multiples of: 1

125 A30 V1.8 mOhmsN - Channel 2.35 V- 55 C+ 175 C167 WSMD/SMTTO - 263 - 3Reel , Cut TapeSi1 Channel- 20 V , 20 V46 nCEnhancement StrongIRFET
MOT9N50F


500V 9A 44W 700m@10V,4.5A 4V@250uA 1PCSNChannel TO-220F MOSFETs ROHS
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MOT 645
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AUD 0.4612
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HAT1021R-EL-E


Trans MOSFET P-CH 20V 5.5A 8-Pin SOP T/R
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Renesas 645
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AUD 0.8528
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IRF840SPBF


N-Channel 500 V 8A (Tc) 3.1W (Ta), 125W (Tc) Surface Mount D²PAK (TO-263)
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Vishay 645
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AUD 1.334
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8 A500 V850 mOhmsN - Channel 2 V- 55 C+ 150 C125 WSmd/SmtTO - 263 - 3TubeSi1 Channel10 V63 nCEnhancement  
IXTY18P10T


MOSFET -100V -18A
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IXYS 645
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AUD 3.6776
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18 A100 V120 mOhmsP - Channel 4.5 V- 55 C+ 150 C83 WSmd/SmtTO - 252 - 3TubeSi1 Channel15 V39 nCEnhancement  
NVTFS5C673NLTAG


MOSFET T6 60V NCH LL U8FL
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ON Semiconductor 644
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AUD 0.8892
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50 A60 V8.1 mOhmsN - Channel 1.2 V- 55 C+ 175 C46 W  Cut TapeSi1 Channel10 V9.5 nCEnhancementAec - Q100 
IPBE65R230CFD7AATMA1


MOSFET AUTOMOTIVE
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Infineon 644
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AUD 2.4955
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11 A650 V439 mOhmsN - Channel 4 V- 55 C+ 150 C63 WSMD/SMTTO - 263 - 7 - 11Coolmos , Cut Tape , Reel , ReelSi1 Channel- 20 V , + 20 V23 nCEnhancementAEC - Q101CoolMOS
STF35N65DM2


MOSFET N-channel 650 V, 0.093 Ohm typ 32 A MDmesh DM2 Power MOSFET
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STMicroelectronics 644
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AUD 5.3522
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            Si      
18N65L-TF1-T


TO-220F1 MOSFETs ROHS
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Unisonic 643
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AUD 0.9267
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IRF9530PBF


P-Channel 100 V 12A (Tc) 88W (Tc) Through Hole TO-220AB
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Vishay 19
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AUD 1.0507
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12 A100 V300 mOhmsP - Channel 4 V- 55 C+ 175 C88 WThrough HoleTO - 220AB - 3TubeSi1 Channel10 V38 nCEnhancement  
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